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- Skupinski, Marek, et al.
(författare)
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Carbon nanopillar array deposition on SiO2 by ion irradiation through a porous alumina template
- 2007
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Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 82:3, s. 359-362
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Tidskriftsartikel (refereegranskat)abstract
- A method for producing ordered carbon nanopillar arrays is presented. The method is based on ion irradiation through a small anodic porous alumina membrane, resulting in carbon deposition within the centers of the pores on a gold covered SiO2/Si substrate. Samples were irradiated by 4 MeV Cl2+ ions with fluences of . The combined use of pick’n place positioning of the small porous alumina templates and ion beam irradiation is well suited for post-processing on silicon based integrated circuits. It provides fast local deposition at low temperature of high-density ordered carbon nanopillar arrays in larger silicon based systems, e.g., for field emitting or biosensors applications.
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- Skupiński, Marek, et al.
(författare)
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Nanopattern transfer to SiO2 by ion track lithography and highly selective HF vapor etching
- 2007
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 25:3, s. 862-867
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Tidskriftsartikel (refereegranskat)abstract
- The authors present a method for high aspect ratio nanopatterning of high density (1010 pores/cm2) self-assembled porous alumina membrane pattern into thermally grown SiO2 on silicon. The pattern transfer is accomplished by irradiating through 2 µm thick porous alumina membrane with swift heavy ions (4 MeV Cl2+). Ions passing through the nanopores in the mask at a fairly high fluence (typically 1014 ions/cm2) are impinging on the substrate and creating a continuous volume of overlapping ion tracks of damage. The damage is sufficient to be selectively etched by HF vapor from an aqueous HF solution. From an alumina mask with pores of 70 nm diameter, a pattern of pores of 77 nm in diameter and the same distance of 100 nm between the centers of the pores was transferred. The deepest observed etched pores were 355 nm, giving an aspect ratio of 5, which is up to 40 times larger compare to earlier work where HF wet etching was used. This ion track lithography technique shows a potential to produce nanostructures with even higher aspect ratios.
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