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- Asplund, C., et al.
(författare)
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Doping-induced losses in AlAs/GaAs distributed Bragg reflectors
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:2, s. 794-800
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Tidskriftsartikel (refereegranskat)abstract
- We have studied n- and p-type doping-induced performance degradation of AlAs/GaAs distributed Bragg reflectors (DBRs) for applications in vertical cavity lasers (VCLs). Based on high-accuracy optical reflectance and triple-axis x-ray diffraction measurements on a variety of differently doped DBR structures grown by metalorganic vapor-phase epitaxy, a fitting procedure was employed to extract the doping-dependent optical loss. A striking observation is that the reflectance of these DBRs is much more sensitive to n- than p-type doping incorporation. While in the latter case the loss can be well accounted for by intervalence-band and free-carrier absorption, additional loss mechanisms must be considered for n-type DBRs. We relate the losses to doping-enhanced interdiffusion effects resulting in increased interface scattering. These findings should have important consequences for the design of VCLs, demonstrating the importance of reduced n-type doping concentrations and/or growth temperatures, or the application of alternative device concepts, e.g., employing intracavity contacts.
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