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- Bilenberg, B., et al.
(author)
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High resolution 100kV electron beam lithography in SU-8
- 2006
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 83:4-9, s. 1609-1612
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Journal article (peer-reviewed)abstract
- High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments. (c) 2006 Elsevier B.V. All rights reserved.
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