| 1. |
- Solovan, M. N., et al.
(författare)
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Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC
- 2018
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Ingår i: Semiconductors. - 1063-7826. ; 52:2, s. 236-241
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Tidskriftsartikel (refereegranskat)abstract
- Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage Voc = 1.84 V and the short-circuit current density Isc = 2.9 mA/cm2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.
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| 2. |
- Solovan, M. N., et al.
(författare)
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Structural and optical properties of Cu2ZnSn(S,Se)4 films obtained by magnetron sputtering of a Cu2ZnSn alloy target
- 2017
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Ingår i: Physics of the Solid State. - 1063-7834. ; 59:8, s. 1643-1647
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Tidskriftsartikel (refereegranskat)abstract
- Results of the study of structural and optical properties of Cu2ZnSn(S,Se)4 thin films obtained by sulfitation (selenization) of Cu2ZnSn films which were sputtered by target direct current magnetron sputtering using a stoichiometric Cu2ZnSn (99.99%) target are presented. It has been found that Cu2ZnSn(S,Se)4 thin films are polycrystalline with a grain size of ~60 nm. The optical bandgap of Cu2ZnSnS4 (Eg op = 1.65 eV) and Cu2ZnSnSe4 (Rg op = 1.2 eV) thin films have been determined.
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