| 1. |
- Ivanov, AM, et al.
(författare)
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P-type 6H-SiC films in the creation of triode structures for low ionization radiation
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 969-972
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Konferensbidrag (refereegranskat)abstract
- The signal value of the transistor-like detector on applied voltage was investigated. It was measure induced-current recording from fluxes of X-ray and optical quanta. A superlinear rise in the resulting signal was observed with increasing voltage. The signal was amplified by a factor of several tens with respect to the value chosen for normalization. A description in terms of the phototriode model gives acceptable values for the main parameters: base width, diffusion length of electrons, and space charge region of the collector. It is important that SiC films with the thickness d similar to 10 mum can be used to detect penetrating radiation, for example, X-ray. The effective thickness of the films exceeds d by the signal amplification factor (and proves to be in range of hundred mum).
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| 2. |
- Lebedev, Alexander, et al.
(författare)
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Radiation hardness of silicon carbide
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 957-960
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Konferensbidrag (refereegranskat)abstract
- The aim of this study was an estimation of the radiation hardness of silicon carbide and devices on its base. By using data, obtained by the authors, and literature data, it was possible to calculate carrier removal rate in SiC, irradiated by different charge participles, radiation defects (RD) introduction rate and generation constant of deeper RD. The obtained results were compared with known values of this parameters for Si. Results of comparison show, that during calculation of above parameters for SiC (or other wide-bandgap semiconductors (WBS), it is necessary to take into account their temperature dependence. Commonly, this comparison shows, that SiC is perspective material for developing radiation resistive devices, especially if they must work at high temperatures.
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| 3. |
- Strel'chuk, AM, et al.
(författare)
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Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures
- 2005
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2004. - 0878499636 ; , s. 993-996
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Konferensbidrag (refereegranskat)abstract
- The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x10(6) rad) and 1 MeV neutrons in the doses range from 1.2x10(14) cm(-2) to 6.24x10(14) cm(-2). Neutron irradiation with a dose 1.2x10(14) cm(-2) increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hv(max) ≈ 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x10(14) cm(-2)) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.
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