| 1. |
- Hemmeter, Andreas, et al.
(författare)
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Terahertz Rectennas on Flexible Substrates Based on One-Dimensional Metal–Insulator–Graphene Diodes
- 2021
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 3:9, s. 3747-3753
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Tidskriftsartikel (refereegranskat)abstract
- Flexible energy harvesting devices fabricated in scalable thin-film processes are crucial for wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal–insulator–graphene diode, offering low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a scalable process by photolithography using graphene grown by chemical vapor deposition. A one-dimensional junction reduces the junction capacitance and enables operation up to 170 GHz. The rectenna shows a maximum responsivity of 80 V/W at 167 GHz in free space measurements and minimum noise equivalent power of 80 pW/√Hz.
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| 2. |
- Quellmalz, Arne, et al.
(författare)
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Large-area integration of two-dimensional materials and their heterostructures by wafer bonding
- 2021
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Ingår i: Nature Communications. - : Springer Nature. - 2041-1723. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to 4520 cm2V-1s-1. Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing. The existing integration approaches for 2D materials often degrade material properties and are not compatible with industrial processing. Here, the authors devise an adhesive wafer bonding strategy to transfer and stack monolayers, suitable for back end of the line integration of 2D materials.
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| 3. |
- Quellmalz, Arne, et al.
(författare)
-
Large-Area Integration of Two-Dimensional Materials and Their Heterostructures Using Wafer Bonding
- 2021
-
Ingår i: Nature Communications. - 2041-1723. ; 12, s. 917-
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Tidskriftsartikel (refereegranskat)abstract
- Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to 4520cm2V−1s−14520cm2V−1s−1. Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.
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