| 1. |
- Ambrosio, L., et al.
(författare)
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Massive foreign body reaction and osteolysis following primary anterior cruciate ligament reconstruction with the ligament augmentation and reconstruction system (LARS): a case report with histopathological and physicochemical analysis
- 2022
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Ingår i: Bmc Musculoskeletal Disorders. - : Springer Science and Business Media LLC. - 1471-2474. ; 23:1
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Tidskriftsartikel (refereegranskat)abstract
- Background: Autologous hamstrings and patellar tendon have historically been considered the gold standard grafts for anterior cruciate ligament reconstruction (ACLR). In the last decades, the utilization of synthetic grafts has re-emerged due to advantageous lack of donor site morbidity and more rapid return to sport. The Ligament Augmentation and Reconstruction System (LARS) has demonstrated to be a valid and safe option for ACLR in the short term. However, recent studies have pointed out the notable frequency of associated complications, including synovitis, mechanical failure, and even chondrolysis requiring joint replacement. Case presentation: We report the case of a 23-year-old male who developed a serious foreign body reaction with wide osteolysis of both femoral and tibial tunnels following ACLR with LARS. During first-stage arthroscopy, we performed a debridement of the pseudocystic mass incorporating the anterior cruciate ligament (ACL) and extending towards the tunnels, which were filled with autologous anterior iliac crest bone graft chips. Histological analysis revealed the presence of chronic inflammation, fibrosis, and foreign body giant cells with synthetic fiber inclusions. Furthermore, physicochemical analysis showed signs of fiber depolymerization, increased crystallinity and formation of lipid peroxidation-derived aldehydes, which indicate mechanical aging and instability of the graft. After 8 months, revision surgery was performed and ACL revision surgery with autologous hamstrings was successfully carried out. Conclusions: The use of the LARS grafts for ACLR should be cautiously contemplated considering the high risk of complications and early failure.
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| 2. |
- Avolio, G., et al.
(författare)
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A procedure for the extraction of a nonlinear microwave GaN FET model
- 2017
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Ingår i: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. - : Wiley. - 0894-3370 .- 1099-1204. ; 30:1, s. UNSP e2151-
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we describe an extraction procedure of nonlinear models for microwave field-effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S-parameter measurements. Next, we refine the parameters by optimization against low-frequency and high-frequency vector-calibrated large-signal measurements gathered with a Large-Signal-Network Analyzer (LSNA). As case study we consider a 0.25x200 mu m(2) GaN FET on SiC for power amplifier applications. Ultimately, we want to show that a good accuracy level can be achieved while minimizing the extraction effort and that an accurate model can be built and suitably tailored depending on the final application.
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| 3. |
- Avolio, G., et al.
(författare)
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Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique
- 2014
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 62:11, s. 2526-2537
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Tidskriftsartikel (refereegranskat)abstract
- In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measurements acquired under "dynamic-bias" operation. Specifically, the transistor is driven by low-frequency large signals while a high-frequency tickle is applied on top of them. The low-frequency large signals, along with the dc bias voltages, set the large-signal operating point which represents a dynamic-bias condition for the device under test. Thanks to this technique, one can get at once and separately the nonlinear currents and charges of the transistor as a result of a very few nonlinear measurements. Additionally, the proposed technique allows one to accurately reconstruct the time-domain waveforms at the device-under-test terminals while the frequency of the tickle can be set as high as the bandwidth of today's vector calibrated nonlinear measurement systems (i.e., 67 GHz). The approach, which is general and independent of device technology, is applied on a 0.15-mu m GaAs pHEMT specifically designed for resistive cold-FET mixer applications.
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| 4. |
- Avolio, G., et al.
(författare)
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Nonlinear model for 40-GHz cold-FET operation
- 2014
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Ingår i: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014.
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Konferensbidrag (refereegranskat)abstract
- We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.
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