| 1. |
- Vetter, W.M., et al.
(författare)
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Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions
- 2003
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 98:3, s. 220-224
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Tidskriftsartikel (refereegranskat)abstract
- The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H-SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3<101¯0>, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops' nucleation, while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms. © 2003 Elsevier Science B.V. All rights reserved.
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| 2. |
- Zimmermann, U., et al.
(författare)
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Material defects in 4H-silicon carbide diodes
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:1, s. 611-618
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Tidskriftsartikel (refereegranskat)abstract
- Crystallographic defects revealed by synchrotron white beam x-ray topography, electron beam induced current, optical microscopy, and electroluminescence are correlated with the electrical characteristics of medium-voltage epitaxial 4H-silicon carbide diodes. Diodes that include macroscopic crystallographic defects show a significantly reduced reverse breakdown voltage with typical microplasma current fluctuations under reverse bias. Microplasma current paths are revealed by increased electroluminescence both under forward and reverse bias of the diodes and coincide with the locations of screw dislocations in the epitaxial layers of the diodes. The role of crystallographic imperfections on the formation of stacking faults responsible for the degradation of bipolar silicon carbide components is discussed.
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