| 1. |
- Soderstrom, D., et al.
(author)
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Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
- 2001
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In: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 4:6, s. G53-G55
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Journal article (peer-reviewed)abstract
- Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.
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| 2. |
- Soderstrom, D., et al.
(author)
-
Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy
- 2001
-
In: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 148:7, s. G375-G378
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Journal article (peer-reviewed)abstract
- Ruthenium-doped InP (InP:Ru) has been grown by low-pressure hydride vapor-phase epitaxy (LP-HVPE) using bis(eta (5)-2,4-dimethylpentadienyl)ruthenium(II) as precursor. Ruthenium concentrations in the range 2 x 10(15) to 2 x 10(18) cm(-3) have been achieved. The Ru incorporation has been studied in terms of incorporation flux, and it is shown that the growth rate limits: the incorporation rate. From current-voltage measurements on n-InP/InP:Ru/n-InP and p-InP/InP:Ru/p-InP structures, resistivities greater than 10(3) Omega cm and greater than 10(10) Omega cm have been obtained, respectively.
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