| 1. |
- Xu, Peng, et al.
(författare)
-
Ultra-shallow junctions formed using microwave annealing
- 2013
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 102:12, s. 122114-
-
Tidskriftsartikel (refereegranskat)abstract
- Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 degrees C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 degrees C.
|
|
| 2. |
- Fu, Chaochao, et al.
(författare)
-
Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications
- 2015
-
Konferensbidrag (refereegranskat)abstract
- There is a rising demand for low temperature polysilicon TFT these years due to the rapidly increasing market of high resolution display panels. In this paper, both low temperature microwave annealing and laser annealing were used to crystallize amorphous silicon film on glass substrate. It is found that both methods had successfully transferred the amorphous silicon into polysilicon according to Raman spectra results. The microwave crystallized polysilicon had smaller grain size and lower tensile stress than the laser crystallized one. After implantation and activation of BF2 and P, sheet resistance values of the BF2-implanted microwave crystallized samples were similar to that of laser crystallized ones. However, for the P implanted samples, the microwave crystallized samples had two to three magnitude higher sheet resistance compared with the laser crystallized ones.
|
|
| 3. |
- Fu, Chaochao, et al.
(författare)
-
Understanding the microwave annealing of silicon
- 2017
-
Ingår i: AIP Advances. - : AMER INST PHYSICS. - 2158-3226. ; 7:3
-
Tidskriftsartikel (refereegranskat)abstract
- Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.
|
|
| 4. |
- Jia, Xiaomin, et al.
(författare)
-
Single crystal metal-organic framework constructed by vertically self-pillared nanosheets and its derivative for oriented lithium plating
- 2021
-
Ingår i: Cuihuà xuébào. - : Elsevier BV. - 0253-9837 .- 1872-2067. ; 42:9, s. 1553-1560
-
Tidskriftsartikel (refereegranskat)abstract
- This vertically self-pillared (VSP) structure extends the application range of traditional porous materials with facile mass/ion transport and enhanced reaction kinetics. Here, we prepare a single crystal metal-organic framework (MOF), employing the ZIF-67 structure as a proof of concept, which is constructed by vertically self-pillared nanosheets (VSP-MOF). We further converted VSP-MOF into VSP-cobalt sulfide (VSP-CoS2) through a sulfidation process. Catalysis plays an important role in almost all battery technologies; for metallic batteries, lithium anodes exhibit a high theoretical specific capacity, low density, and low redox potential. However, during the half-cell reaction (Li++e=Li), uncontrolled dendritic Li penetrates the separator and solid electrolyte interphase layer. When employed as a composite scaffold for lithium metal deposition, there are many advantage to using this framework: 1) the VSP-CoS2 substrate provides a high specific surface area to dissipate the ion flux and mass transfer and acts as a pre-catalyst, 2) the catalytic Co center favors the charge transfer process and preferentially binds the Li+ with the enhanced electrical fields, and 3) the VSP structure guides the metallic propagation along the nanosheet 2D orientation without the protrusive dendrites. All these features enable the VSP structure in metallic batteries with encouraging performances.
|
|
| 5. |
- Liang, Zuozhong, et al.
(författare)
-
Quasi-single-crystalline CoO hexagrams with abundant defects for highly efficient electrocatalytic water oxidation
- 2018
-
Ingår i: Chemical Science. - : Royal Society of Chemistry (RSC). - 2041-6520 .- 2041-6539. ; 9:34, s. 6961-6968
-
Tidskriftsartikel (refereegranskat)abstract
- Defects and structural long-range ordering have been recognized as two crucial characters for advanced electrocatalysts. However, these two features have rarely been achieved together. Herein, we report the preparation of single-crystalline CoO hexagrams and demonstrate their exceptional electrocatalytic properties for water oxidation. The quasi-single-crystalline CoO hexagrams, prepared at the critical phase transition point of -Co(OH)(2)/Co(OH)F hexagrams, possess both abundant oxygen vacancies as defects and structural long-range ordering. The matching between the b-axis of Co(OH)F crystals and the a-axis of -Co(OH)(2) crystals is critical for the formation of the CoO hexagram single crystals. The quasi-single-crystalline CoO hexagrams with abundant defects are highly efficient for water oxidation by delivering a 10 mA cm(-2) current density at a low overpotential of 269 mV in a 1 M KOH aqueous solution.
|
|
| 6. |
- Wang, Yanzhi, et al.
(författare)
-
Fe Single-atom Sites in Two-Dimensional Nitrogen-doped Porous Carbon for Electrocatalytic Oxygen Reduction
- 2022
-
Ingår i: ChemCatChem. - : Wiley. - 1867-3880 .- 1867-3899. ; 14:14
-
Tidskriftsartikel (refereegranskat)abstract
- The development of electrocatalysts for oxygen reduction reaction (ORR) is important for energy conversion devices, such as fuel cells, and metal-air batteries. Here, we have developed a confined space strategy to prepare a two-dimensional (2D) leaf-like nitrogen (N)-containing porous carbon as a single-atom catalyst substrate. ZIF−L materials have been confined in a thin silica layer to regulate the pyrolysis. The obtained Fe single atoms doped N-containing porous carbons (Fe SAs/N−C) maintain the 2D morphology and have Fe single-atom active sites. Correspondingly, Fe SAs/N−C exhibits excellent ORR performance (E1/2 of 0.907 V), which is more positive than those of commercially available Pt/C (0.874 V) and most reported non-noble metal catalysts. The durability test shows that Fe SAs/N−C exhibits good stability during electrocatalytic process. This rational design shows a new strategy to prepare 2D catalyst supports with single-atom active sites.
|
|
| 7. |
- Xu, Peng, et al.
(författare)
-
Investigation of resistivity dependent microwave annealing on Si substrates
- 2015
-
Konferensbidrag (refereegranskat)abstract
- Heating of silicon substrates featuring different resistivity values by microwave annealing is investigated. The absorption of microwave energy for silicon wafers is found to be consistent with ohmic conduction loss theory. The strongest absorption occurs when the resistivity was around 10 Ω·cm. As the carrier concentration and the conductivity of silicon increase with temperature, the absorption of microwave energy also varies during the annealing processes. Furthermore, it is found that the electric field density around the annealed silicon wafer is stronger for higher conductive silicon substrates at fixed microwave power.
|
|
| 8. |
|
|
| 9. |
- Zhou, Xiangbiao, et al.
(författare)
-
Schottky barrier height tuning via nickel silicide as diffusion source dopant segregation scheme with microwave annealing
- 2015
-
Konferensbidrag (refereegranskat)abstract
- In this work, microwave annealing is explored to tune the Schottky barrier height between NiSi and Si via boron and arsenic dopant segregation using silicide as diffusion source scheme. The microwave annealing is found to be able to obtain equivalent electron and hole Schottky barrier heights at significantly lower temperature (>100 °C) compared with conventional rapid thermal annealing. A plausible interpretation has been further proposed to explain the impact of low temperature microwave annealing on formation of dopant segregated Schottky junctions. The effectiveness of Schottky barrier height tuning below 400 °C by microwave annealing paves the way to form advanced source/drain and contact structures for future ultra-scaled MOSFETs and monolithic 3D sequential integration.
|
|
| 10. |
- Chen, Jingxuan, et al.
(författare)
-
Regulating Thiol Ligands of p-Type Colloidal Quantum Dots for Efficient Infrared Solar Cells
- 2021
-
Ingår i: ACS Energy Letters. - : American Chemical Society (ACS). - 2380-8195. ; 6:5, s. 1970-1989
-
Tidskriftsartikel (refereegranskat)abstract
- The p-type semiconducting colloidal quantum dot (CQD), working as a hole conductor in CQD solar cells (CQDSCs), is critical for charge carrier extraction and therefore, to large extent, determines the device's photovoltaic performance. However, during the preparation of a p-type CQD solid film on the top of an n-type CQD solid film, forming a p-n heterojunction within the CQDSCs, the optoelectronic properties of the underlayered n-type CQD solid film are significantly affected by conventional 1,2-ethanedithiol (EDT) ligands due to its high reactivity. Herein, a series of thiol ligands are comprehensively studied for p-type CQDs, which suggests that, by finely controlling the interaction between the CQDs and thiol ligands during the preparation of p-type CQD solid films, the n-type CQD solid films can be well protected and avoid destruction induced by thiol ligands. The p-type CQD solid film with 4-aminobenzenethiol (ABT) passivating the CQD surface exhibits better optoelectronic properties than the conventional p-type EDT-based CQD solid films, resulting in an improved photovoltaic performance in CQDSCs.
|
|
