| 1. |
- Toth-Pal, Zsolt, et al.
(author)
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Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and molybdenum substrate and between molybdenum substrate and bulk copper
- 2016
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In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. - : Trans Tech Publications. - 9783035710427 ; , s. 1061-1065
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Conference paper (peer-reviewed)abstract
- Thermal contact resistances between a silver metallized SiC chip and a Molybdenum substrate and between the Molybdenum substrate and bulk Copper were measured in a heat transfer experiment. An experimental method to separate thermal contact resistances in a multilayer heat transfer path was used to extract the layer-specific contact resistances. The experimental results were compared with theory based calculations and also with 3-D computational fluid dynamics (CFD) simulation results. The results show significant pressure dependence of the thermal contact resistance and the results show higher thermal contact resistance per unit area between the bulk SiC chip and Molybdenum than between Molybdenum and bulk Copper.
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| 2. |
- Belov, Ilja, et al.
(author)
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Application of CFD Modelling for Energy Efficient Humidity Mangement of an Electronics Enclosure in Storage under Severe Climatic Conditions
- 2008
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In: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. - : IEEE. - 9781424421275 ; , s. 430-437
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Conference paper (peer-reviewed)abstract
- A CFD modelling methodology including experimental validation has been developed and applied for investigation of anti-moisture measures in a non- hermetic electronics enclosure containing a number of printed circuit boards, and placed in a severe storage environment. In the climatic test the temperature and the relative humidity have been varried from +33degC to +71degC and from 14% to 80%, respectively. Enclosure heater solutions have been parametrically studied by simulation. A heating strategy involving various power levels has been determined, which is just sufficient to maintain the internal relative humidity below 60%, thereby reducing the risk for dew formation on the electronics assembly.
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| 3. |
- Kostov, Konstantin Stoychev, et al.
(author)
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Impact of package parasitics on switching performance
- 2016
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In: Materials Science Forum. - : Trans Tech Publications Ltd. - 9783035710427 ; , s. 1057-1060
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Conference paper (peer-reviewed)abstract
- The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.
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| 4. |
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| 5. |
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| 6. |
- Toth-Pal, Zsolt, et al.
(author)
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Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and DBC substrate
- 2015
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In: European Conference on Silicon Carbide and Related Materials, ECSCRM 2014. - : Trans Tech Publications Inc.. - 9783038354789 ; 821-823, s. 452-455
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Conference paper (peer-reviewed)abstract
- Thermal contact resistances between a silver metallized SiC chip and a direct bonded copper (DBC) substrate have been measured in a heat transfer experiment. A novel experimental method to separate thermal contact resistances in multilayer heat transfer path has been demonstrated. The experimental results have been compared both with analytical calculations and with 3D computational fluid dynamics (CFD) simulation results. A simplified CFD model of the experimental setup has been validated. The results show significant pressure dependence of the thermal contact resistance but also a pressure independent part.
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| 7. |
- Toth-Pal, Zsolt, et al.
(author)
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Thermal improvement of press-pack packages : Pressure dependent thermal contact resistance with a thin silver interlayer between molybdenum substrate and silicon carbide chip
- 2017
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In: 2017 IEEE International Workshop on Integrated Power Packaging, IWIPP 2017. - : IEEE. - 9781509042784
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Conference paper (peer-reviewed)abstract
- In typical press-pack, free-floating packages the thermal contact resistance between chip and substrate is a major limiting factor for the cooling ability of the power module. We report an introduction of a new, thin Silver interlayer between Molybdenum substrate and chip, and how it improves the thermal contact. The thermal contact resistances were measured with and without a Silver interlayer at different pressures. The surface roughness of the SiC chip and the Molybdenum substrate were characterized. The thermal contact resistances were measured at three different heating power levels. The results show a significant reduction of the thermal contact resistance with only a few micrometer Silver interlayer. The improved cooling effect of a Silver interlayer was also demonstrated with a fluid dynamics type of 3 D simulation comparing temperature distributions with and without a Silver interlayer. These results project a possible thermal improvement in press-pack packages.
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| 8. |
- Zhang, Yafan, et al.
(author)
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Investigation of a Finned Baseplate Material and Thickness Variation for Thermal Performance of a SiC Power Module
- 2014
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In: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014. - : IEEE Computer Society. - 9781479947904
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Conference paper (peer-reviewed)abstract
- A simplified transient computational fluid dynamics model of an automotive three-phase double-side liquid cooled silicon carbide power inverter, including pin-fin baseplates, has been developed and qualified for parametric studies. Effective heat transfer coefficients have been extracted from the detailed pin-fin baseplate model for two coolant volume flow rates 2 l/min and 6 l/min, at the coolant temperature 105 degrees C. The inverter model includes temperature dependent heat losses of SiC transistors and diodes, calculated for two driving cycles. Baseplate materials such as copper, aluminum-silicon carbide metal matrix composite, aluminium alloy 6061 as well as virtual materials have been evaluated in the parametric studies. Thermal conductivity, specific heat and density have been varied as well as thickness of the finned baseplates (1 to 3 mm). A trade-off between temperature of SiC chips and baseplate weight has been investigated by means of Pareto optimization. The main results of the parametric studies include a weak dependence (1 to 3 degrees C) of the chip temperature on baseplate thickness. Furthermore, switching e.g. between copper and AlSiC results in 5 to 8 degrees C increase of the chip temperature, at 65 to 70 % baseplate weight reduction.
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| 9. |
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| 10. |
- Zhang, Yafan, et al.
(author)
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Multiphysics Characterization of a Novel SiC Power Module
- 2019
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In: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : IEEE. - 2156-3950 .- 2156-3985 .- 1070-9886 .- 1558-3678. ; 9:3, s. 489-501
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Journal article (peer-reviewed)abstract
- This paper proposes a novel power module concept specially designed for highly reliable silicon carbide power devices for medium- and high-power applications. The concept consists of two clamped structures: 1) a press-pack power stage accommodating silicon carbide power switch dies, and 2) perpendicularly clamped press-pack heatsinks, in which, the heatsinks are in contact with electrically insulated case plates of the power stage. The concept enables bondless package with symmetric double-sided cooling of the dies and allows for an order of magnitude higher clamping force on the heatsinks than what can be applied on the dies. The concept has been evaluated in a first demonstrator (half-bridge configuration with ten paralleled silicon carbide dies in each position). Experimental methodologies, setups, and procedures have been presented. The commutation loop inductance is approximately 9 nH at 78 kHz. The junction-to-case thermal resistance is approximately 0.028 K/W. Furthermore, a simplified 3D finite element thermomechanical model representing the center unit of the demonstrator, has been established for the purpose of future optimization. The accuracy of the simulated temperatures is within 4 % compared to the measurements. Finally, a 3D thermomechanical stress distribution map has been obtained for the simplified model of the demonstrator.
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