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Numrering	Referens	Omslagsbild	Hitta
1.	Zhang, Zhi-Bin, et al. (författare) Photo-Activated Interaction Between P3HT and Single-Walled Carbon Nanotubes Studied by Means of Field-Effect Response 2009 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 30:12, s. 1302-1304 Tidskriftsartikel (refereegranskat)abstract It is shown in this letter that the field-effect electrical response of transistors with their channel made of networks of single-walled carbon nanotubes (SWNTs) embedded in a poly(3-hexylthiophene) (P3HT) matrix can be significantly altered by light illumination. The experimental results indicate a photo-activated electron transfer from P3HT selectively to the semiconducting SWNTs. This finding points to a potential optoelectronic application of such a field-effect device as a photo-triggered electronic switch.
2.	Ackelid, Ulf, et al. (författare) Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures 1986 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 7:6, s. 353-355 Tidskriftsartikel (refereegranskat)abstract Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.
3.	Andersson, Christer, 1982, et al. (författare) A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications 2011 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 32:6, s. 788-790 Tidskriftsartikel (refereegranskat)abstract SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
4.	Andersson, Kristoffer, 1976, et al. (författare) Fabrication and characterization of field-plated buried-gate SiC MESFETs 2006 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575 Tidskriftsartikel (refereegranskat)abstract Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
5.	Asad, Muhammad, 1986, et al. (författare) Graphene FET on diamond for high-frequency electronics 2022 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 43:2, s. 300-303 Tidskriftsartikel (refereegranskat)
6.	Asad, M., et al. (författare) Graphene FET on Diamond for High-Frequency Electronics 2022 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 43:2, s. 300-303 Tidskriftsartikel (refereegranskat)abstract Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high charge-carrier mobility and saturation velocity in graphene can open way for ultra-fast field-effect transistors with a performance even better than what can be achieved with III-V-based semiconductors. However, the progress of high-speed graphene transistors has been hampered by fabrication issues, influence of adjacent materials, and self-heating effects. Here, we report on the improved performance of graphene field-effect transistors (GFETs) obtained by using a diamond substrate. An extrinsic maximum frequency of oscillation fmax of up to 54 GHz was obtained for a gate length of 500 nm. Furthermore, the high thermal conductivity of diamond provides an efficient heat-sink, and the relatively high optical phonon energy of diamond contributes to an increased charge-carrier saturation velocity in the graphene channel. Moreover, we show that GFETs on diamond exhibit excellent scaling behavior for different gate lengths. These results promise that the GFET-on-diamond technology has the potential of reaching sub-terahertz frequency performance.
7.	Beuerle, Bernhard, et al. (författare) Integrating InP MMICs and Silicon Micromachined Waveguides for sub-THz Systems 2023 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803 Tidskriftsartikel (refereegranskat)abstract A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220-330 GHz in a back-to-back configuration. Measured insertion loss is 3-6 dB at 250-300 GHz, and return loss is in excess of 5 dB.
8.	Beuerle, Bernhard, et al. (författare) Integrating InP MMICs and Silicon Micromachined Waveguides for Sub-THz Systems 2023 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 44:10, s. 1800-1803 Tidskriftsartikel (refereegranskat)abstract A novel co-designed transition from InP monolithic microwave integrated circuits to silicon micromachined waveguides is presented. The transition couples a microstrip line to a substrate waveguide sitting on top of a vertical waveguide. The silicon part of the transition consists of a top and a bottom chip, fabricated in a very low-loss silicon micromachined waveguide technology using silicon on insulator wafers. The transition has been designed, fabricated and characterized for 220 GHz to 330 GHz in a back-to-back configuration. Measured insertion loss is 3 dB to 6 dB at 250 GHz to 300 GHz , and return loss is in excess of 5 dB.
9.	Bonmann, Marlene, 1988, et al. (författare) Graphene field-effect transistors with high extrinsic fT and fmax 2019 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 40:1, s. 131-134 Tidskriftsartikel (refereegranskat)abstract In this work, we report on the performance of graphene field-effect transistors (GFETs) in which the extrinsic transit frequency (fT) and maximum frequency of oscillation (fmax) showed improved scaling behavior with respect to the gate length (Lg). This improvement was achieved by the use of high-quality graphene in combination with successful optimization of the GFET technology, where extreme low source/drain contact resistances were obtained together with reduced parasitic pad capacitances. GFETs with gate lengths ranging from 0.5 μm to 2 μm have been characterized, and extrinsic fT and fmax frequencies of up to 34 GHz and 37 GHz, respectively, were obtained for GFETs with the shortest gate lengths. Simulations based on a small-signal equivalent circuit model are in good agreement with the measured data. Extrapolation predicts extrinsic fT and fmax values of approximately 100 GHz at Lg=50 nm. Further optimization of the GFET technology enables fmax values above 100 GHz, which is suitable for many millimeter wave applications.
10.	Borg, Johan (författare) Performance and spatial sensitivity variations of single photon avalanche diodes manufactured in an image sensor CMOS process 2015 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 36:11, s. 1118-1120 Tidskriftsartikel (refereegranskat)abstract In this letter we present the results from a series of single-photon avalanche diode (SPAD) structures implemented in a commercial 0.18 μm CMOS process intended for CMOS image sensors. Variations without effect on the performance and variations that produced non-functional devices are described. Devices based on the P+/NWELL and deep-NWELL/P-EPI SPADs junctions were found to work well in this process. When biased for 10% QE the best 10 μm diameter P+/NWELL SPADs exhibited a DCR of about 1 kHz, whereas the DCR of the deep-NWELL/P-EPI SPADs was only 10 Hz under the same conditions. We also show that the former type exhibited local sensitivity variations within the SPADs ranging from a factor 4 at low excess voltage to 1.2 at an excess voltage of about 0.5 V. No significant sensitivity variations were found for the deep- NWELL/P-EPI SPADs, but they were found to exhibit significant sensitivity outside the central junction, contributing from 8.3 % at low excess voltage to approximately 70% at high excess voltage
11.	Briand, D., et al. (författare) Thermally isolated MOSFET for gas sending application 2001 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 22:1, s. 11-13 Tidskriftsartikel (refereegranskat)abstract This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2°C/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.
12.	Bryllert, Tomas, et al. (författare) Vertical high-mobility wrap-gated InAs nanowire transistor 2006 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:5, s. 323-325 Tidskriftsartikel (refereegranskat)abstract In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
13.	Cai, W. L., et al. (författare) Angular Dependent Auto-Oscillations by Spin-Transfer and Spin-Orbit Torques in Three-Terminal Magnetic Tunnel Junctions 2023 Ingår i: Ieee Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 44:5, s. 861-864 Tidskriftsartikel (refereegranskat)abstract Spintronic oscillators are promising candidates for neuromorphic computing due to their true miniaturization, non-linearity and synchronization properties. However, spin torque nano-oscillators are excited by current-induced spin-transfer torque which may cause high power consumption and reliability problems. Spin Hall nano-oscillators can realize higher energy efficiency, while their relatively low power emission limits their further applications. Here, we demonstrate three-terminal magnetic tunnel junction based spin torque nano-oscillators excited by the combination of spin-transfer and spin-orbit torques under different angle configurations. Thanks to the large spin Hall angle (-0.278) of W, the ratio between threshold current density of spin-transfer and spin-orbit torques for auto-oscillations can reach 0.6, indicating their high energy efficiency. Furthermore, we observe that the ratio has a sine function dependence on the angle between the spin-polarization directions of spin-transfer and spin-orbit torques. Our work could benefit the development of high-efficiency spintronic oscillators and their large network designs.
14.	Capriata, Corrado Carlo Maria, et al. (författare) Impact of Random Grain Structure on Spin-Hall Nano-Oscillator Modal Stability 2022 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 43:2, s. 312-315 Tidskriftsartikel (refereegranskat)abstract Spin-Hall nano-oscillators are a promising class of microwave spintronic devices with potential applications in RF/microwave communication and neuromorphic computing. The nano-constriction spin-Hall nano-oscillators (NC-SHNO) have relatively high power, narrow linewidth, and low drive current. Several synchronization schemes e.g. arrays of spin-wave coupled oscillators have been proposed for more stable operation and higher output power. For such arrays, it is crucial to have good oscillator stability and small device-to-device variability. Here, a micromagnetic simulation technique is proposed that includes realistic material properties and hence enables variability and modal stability to be investigated. It is demonstrated, using both measurements and simulation, that the presence of physical grains in the free magnetic layer can induce multiple oscillation modes or frequency sidebands. Our investigation could help in the development of more stable NC-SHNOs that would enable oscillator arrays with stronger synchronization. Author
15.	Cha, Eunjung, 1985, et al. (författare) InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers 2020 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:7, s. 1005-1008 Tidskriftsartikel (refereegranskat)abstract This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 mu W. This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4-8 GHz (C-band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of 300 mu W, the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of 112 mu W, the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.
16.	Chacinski, Marek, et al. (författare) Electroabsorption Modulators Suitable for 100-Gb/s Ethernet 2008 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:9, s. 1014-1016 Tidskriftsartikel (refereegranskat)abstract The design of a traveling-wave electroabsorption modulator (TWEAM) has been improved to decrease the drive voltage. The absorption layer was optimized and together with a novel segmentation of microwave design was introduced to increase the active modulator length. The resulting -3-dBe bandwidth of fabricated devices was estimated to be 99 GHz. Extinction ratios of 10 dB back-to-back and 6.7 dB after transmission over 2.2-km long fiber were measured with an incident drive voltage of only 2 V peak to peak. This TWEAM performance is believed to constitute a new state of the art for modulators suitable for 100-Gb/s Ethernet with on-off keying.
17.	Chacinski, Marek, et al. (författare) Monolithically Integrated DFB-EA for 100 Gb/s Ethernet 2008 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 29:12, s. 1312-1314 Tidskriftsartikel (refereegranskat)abstract The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected >= 100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mu m resulting in similar to 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.
18.	Chen, Ding Yuan, et al. (författare) Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors 2020 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:6, s. 828-831 Tidskriftsartikel (refereegranskat)abstract High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality 0.25~\boldsymbol {\mu }\text{m} unintentional doped GaN layer grown directly on a transmorphic epitaxially grown AlN nucleation layer. This approach allows the AlN-nucleation layer to act as a back-barrier, limiting short channel effects and removing buffer leakage. The devices with the 'buffer-free' heterostructure show competitive DC and RF characteristics, as benchmarked against the devices made on a commercial Fe-doped epi-wafer. Peak transconductances of 500 mS/mm and a maximum saturated drain current of 1 A/mm are obtained. An extrinsic \text{f}-{\sf T} of 70 GHz and \text{f}-{\sf max} of 130 GHz are achieved for transistors with a gate length of 100 nm. Pulsed-IV measurements reveal a lower current slump and a smaller knee walkout. The dynamic IV performance translates to an output power of 4.1 W/mm, as measured with active load-pull at 3 GHz. These devices suggest that the 'buffer-free' concept may offer an alternative route for high frequency GaN HEMTs with less electron trapping effects.
19.	Chen, Miaoxiang (författare) Threshold-voltage tuning characteristics of all-organic electrochemical vertical rectifiers on flexible substrates 2006 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:4, s. 243-245 Tidskriftsartikel (refereegranskat)abstract A printed all-organic electrochemical vertical tunable rectifier is demonstrated using a conducting polymer as the active material on a flexible plastic substrate. Solution processable poly(3,4-ethylenedioxythiophene) combined with poly(styrene sulfonic acid) (PEDOT:PSS) was coated on polyester film, the rectifier channel was patterned on the PEDOT:PSS film through directly writing technique without the need for masks, patterns, or dies. A vertically layered electrochemical cell was structured via printing and laminating processes to reduce driving voltages. The resulting rectifier is a three-terminal device, the functionality of threshold voltage tuning is realized by adjusting the potential difference within the electrochemical cell. The driving voltages are reduced significantly compared to rectifiers with lateral device architecture. In a single device, the threshold voltage is tunable between 0.16 and 1.0 V while a bias voltage is swept from 0.9 to 1.7 V. © 2006 IEEE.
20.	Chen, Si, 1982-, et al. (författare) Current gain enhancement for silicon-on-insulator lateral bipolar junction transistors operating at liquid-helium temperature 2020 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:6, s. 800-803 Tidskriftsartikel (refereegranskat)abstract Conventional homojunction bipolar junction transistors (BJTs) are not suitable for cryogenic operation due to heavy doping-induced emitter band-gap narrowing and strong degradation in current gain (β) at low temperature. In this letter, we show that, on lateral version of the BJTs (LBJTs) fabricated on silicon-on-insulator (SOI) substrate, such β degradation can be mitigated by applying a substrate bias (V sub ), and a β over unity is achieved in a base current (I B ) range over 5 orders of magnitudes at 4.2 K, with a peak β ~ 100 demonstrated. The β improvement is explained by the enhanced electron tunneling through base region as a result of base barrier lowering and thinning by a positive Vsub, which leads to dramatic increase of collector current (IC) while IB is negligibly affected.
21.	Chen, S., et al. (författare) Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory 2013 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 34:8, s. 1008-1010 Tidskriftsartikel (refereegranskat)abstract A novel Zn-doped Al2O3 (ZAO) layer prepared by atomic layer deposition (ALD) is used as the charge storage medium in an In-Ga-Zn-O thin-film-transistor memory. The gate insulating stack of Al2O3/ZAO/Al2O3 is assembled in a single ALD step, and is found to possess a high electron storage capacity due to very deep defect levels. The memory device shows a threshold voltage shift as large as 6.38 V after a +15V/1 ms programming pulse, and quite good charge retention. Once programmed, the memory can be only light erased. The underlying mechanisms are discussed with the assistance of density functional theory calculations.
22.	Cui, Xing-Mei, et al. (författare) Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals 2013 Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 34:8, s. 1011-1013 Tidskriftsartikel (refereegranskat)abstract Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.
23.	Dillner, Lars, 1968, et al. (författare) Frequency Multiplier Measurements on Heterostructure Barrier Varactors on a Copper Substrate 2000 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 21:5, s. 206-208 Tidskriftsartikel (refereegranskat)abstract We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduced spreading resistance, and improved thermal conductivity compared to an InP substrate. The devices are fabricated without degrading the electrical characteristics. The three-barrier HBV material grown by MOVPE has a leakage current of only 0.1 mu A/ mu m/sup 2/ at 19 V. The maximum capacitance is 0.54 fF/ mu m/sup 2/. In a frequency tripler experiment a maximum output power of 7.1 mW was generated at 221 GHz with a flange-to-flange efficiency of 7.9%.
24.	Domeij, Martin, et al. (författare) Geometrical effects in high current gain 1100-V 4H-SiC BJTs 2005 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 26:10, s. 743-745 Tidskriftsartikel (refereegranskat)abstract This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain beta = 64 and a breakdown voltage of 1100 V. The high beta value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The BJTs show a clear emitter-size effect indicating that surface recombination has a significant influence on beta. A minimum distance of 2-3 mu m between the emitter edge and base contact implant was found adequate to avoid a substantial beta reduction.
25.	Dong, Y. B., et al. (författare) High Light Extraction Efficiency AlGaInP LEDs With Proton Implanted Current Blocking Layer 2016 Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 37:10, s. 1303-1306 Tidskriftsartikel (refereegranskat)abstract Improving light extraction efficiency is the key issue for light-emitting diodes (LEDs). Nowadays, a vertical structure design dominates LEDs. However, the light from the active region just below the p-electrode is severely blocked by the metal contact. In this letter, we use proton implantation with a depth all the way to the active region to turn the part beneath the p-pad insulating, which constitutes the most-effective-ever current blocking method. Earlier particle implantation studies never reached the device active region. Our experimental results show that the H+-implanted LEDs improve the light output power by 75% compared with non-implanted counterparts and the light intensity increases by 64.48%. By virtue of indium tin oxide current spreading film, the increase in working voltage is negligible. Analyzing the reverse leakage current, the side effect associated with the implantation is limited to an acceptable range. Numerical simulation is performed to support the experiment. Our results represent a new and simple method for solving the light blocking problem in vertical LEDs, without introducing the seemingly existing severe implantation damage to the device structure.

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