| 1. |
- Athle, Robin, et al.
(författare)
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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
- 2021
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Ingår i: ACS applied materials & interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 13:9, s. 11089-11095
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.
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| 2. |
- Athle, Robin, et al.
(författare)
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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- 2022
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Ingår i: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 9:27
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance-voltage measurements, as well as synchrotron-based chemical interface characterization, the FLA and RTP treatments are compared and the FLA results are found in lower interface defect density and higher endurance, but also have generally lower remanent polarization (Pr) compared to RTP. Additionally, ways to achieve high Pr and low interface defect density using multiple lower energy flashes, as well as by pre-crystallization during the ALD growth step are investigated. Using FLA, Pr exceeding 20 µC cm−2 is achieved, with extended endurance properties compared to RTP treatment and a considerably decreased defect density, indicative of a higher quality HZO/InAs interface. This work presents valuable insight into the successful integration of ferroelectric HZO on low thermal budget III–V semiconductors.
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| 3. |
- Benter, Sandra, et al.
(författare)
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Tuneable 2D surface Bismuth incorporation on InAs nanosheets
- 2023
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 15:21, s. 9551-9559
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Tidskriftsartikel (refereegranskat)abstract
- The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (1120) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 degrees C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and incorporation. Ab initio theoretical modelling confirms observed adsorption results, but indicate that both the formation energies as well as kinetic barriers contributes to the observed temperature dependent behaviour. Further, we find that the Bi adsorption rate can differ by at least 2.5 times between the two InAs surfaces while being negligible for standard Si substrates under similar deposition conditions. This, in combination with the observed interface control, provides an excellent opportunity for tuneable Bi integration on 2D InAs nanostructures on standard Si substrates.
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| 4. |
- Irish, Austin, et al.
(författare)
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Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence
- 2022
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Ingår i: NANO EXPRESS. - : Institute of Physics (IOP). - 2632-959X. ; 3:4
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen with nitrogen. Furthermore, the process removed the As-0 defects observed on non-passivated nanowires which are known to impair devices. The results validate plasma as a nitridation technique suitable for nanoscale GaAs crystals. As a simple ex situ procedure with modest temperature and vacuum requirements, it represents an easy method for incorporating GaAs nanostructures into optoelectronic devices.
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| 5. |
- Liu, Yi, et al.
(författare)
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A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)
- 2023
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Ingår i: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 17:5, s. 5047-5058
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Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional (2D) topological insulators have fascinating physical properties which are promising for applications within spintronics. In order to realize spintronic devices working at room temperature, materials with a large nontrivial gap are needed. Bismuthene, a 2D layer of Bi atoms in a honeycomb structure, has recently attracted strong attention because of its record-large nontrivial gap, which is due to the strong spin-orbit coupling of Bi and the unusually strong interaction of the Bi atoms with the surface atoms of the substrate underneath. It would be a significant step forward to be able to form 2D materials with properties such as bismuthene on semiconductors such as GaAs, which has a band gap size relevant for electronics and a direct band gap for optical applications. Here, we present the successful formation of a 2D Bi honeycomb structure on GaAs, which fulfills these conditions. Bi atoms have been incorporated into a clean GaAs(111) surface, with As termination, based on Bi deposition under optimized growth conditions. Low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/S) demonstrates a well-ordered large-scale honeycomb structure, consisting of Bi atoms in a √3 × √3 30° reconstruction on GaAs(111). X-ray photoelectron spectroscopy shows that the Bi atoms of the honeycomb structure only bond to the underlying As atoms. This is supported by calculations based on density functional theory that confirm the honeycomb structure with a large Bi-As binding energy and predict Bi-induced electronic bands within the GaAs band gap that open up a gap of nontrivial topological nature. STS results support the existence of Bi-induced states within the GaAs band gap. The GaAs:Bi honeycomb layer found here has a similar structure as previously published bismuthene on SiC or on Ag, though with a significantly larger lattice constant and only weak Bi-Bi bonding. It can therefore be considered as an extreme case of bismuthene, which is fundamentally interesting. Furthermore, it has the same exciting electronic properties, opening a large nontrivial gap, which is the requirement for room-temperature spintronic applications, and it is directly integrated in GaAs, a direct band gap semiconductor with a large range of (opto)electronic devices.
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| 6. |
- Mamidala, Saketh, Ram, et al.
(författare)
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High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
- 2021
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Ingår i: Nature Electronics. - : Springer Science and Business Media LLC. - 2520-1131. ; , s. 914-914
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Tidskriftsartikel (refereegranskat)abstract
- In-memory computing can be used to overcome the von Neumann bottleneck—the need to shuffle data between separate memory and computational units—and help improve computing performance. Co-integrated vertical transistor selectors (1T) and resistive memory elements (1R) in a 1T1R configuration offer advantages of scalability, speed and energy efficiency in current mass storage applications, and such 1T1R cells could also be potentially used for in-memory computation architectures. Here we show that a vertical transistor and resistive memory can be integrated onto a single vertical indium arsenide nanowire on silicon. The approach relies on an interface between the III–V semiconductor nanowire and a high-κ dielectric (hafnium oxide), which provides an oxide layer that can operate either as a vertical transistor selector or a high-performance resistive memory. The resulting 1T1R cells allow Boolean logic operations to be implemented in a single vertical nanowire with a minimal area footprint
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| 7. |
- Marçal, Lucas A.B., et al.
(författare)
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Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopy
- 2021
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Ingår i: Physical Review Materials. - 2475-9953. ; 5:6
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric and ferroelastic domains have been predicted to enhance metal halide perovskite (MHP) solar cell performance. While the formation of such domains can be modified by temperature, pressure, or strain, established methods lack spatial control at the level of single domains. Here, we induce the formation of ferroelastic domains in CsPbBr3 nanowires at room temperature using an atomic force microscope (AFM) tip and visualize the domains using nanofocused x-ray diffraction with a 60 nm beam. Regions scanned with a low AFM tip force show orthorhombic 004 reflections along the nanowire axis, while regions exposed to higher forces exhibit 220 reflections. The applied stress locally changes the crystal structure, leading to lattice tilts that define ferroelastic domains, which spread spatially and terminate at {112}-type domain walls. The ability to induce individual ferroelastic domains within MHPs using AFM gives new possibilities for device design and fundamental experimental studies.
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