1. |
- Askinazi, L. G., et al.
(författare)
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Evolution of geodesic acoustic mode in ohmic H-mode in TUMAN-3M tokamak
- 2012
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Ingår i: Technical physics letters. - 1063-7850 .- 1090-6533. ; 38:3, s. 268-271
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Tidskriftsartikel (refereegranskat)abstract
- The behavior of a geodesic acoustic mode (GAM) in the TUMAN-3M tokamak has been experimentally studied using the heavy-ion beam probing technique. Oscillations of the electric potential under the action of a GAM localized at the plasma periphery have been detected. The GAM was observed in the regime of low confinement (L-mode) with low plasma density (similar to 0.8 x 10(19) m(-3)) and disappeared upon the transition to a high confinement regime (H-mode). The possible role of GAM as a precursor of the improved confinement (LH-transition) is discussed.
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2. |
- Blank, T. V., et al.
(författare)
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Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes
- 2001
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Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 27:9, s. 776-778
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Tidskriftsartikel (refereegranskat)abstract
- Using metal-semiconductor structures based on a pure epitaxial layer of n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)), UV photodetectors were created with a maximum photosensitivity at 4.9 eV and a quantum efficiency up to 0.3 el/ph. The photosensitivity spectrum of the base structure is close to the spectrum of bactericidal action of the UV radiation. For photon energies in the 3.4 - 4.7 eV range, the quantum efficiency of the photoelectric conversion exhibits rapid growth with the temperature above 300 K, which is explained by the participation of photons in indirect interband transitions. This growth is not manifested when the photon energy is close to the threshold energy of direct optical transitions in the nondirect-bandgap semiconductor, which allows the threshold energy to be evaluated (similar to4.9 eV).
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3. |
- Borisenko, I. V., et al.
(författare)
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Metal-insulator transition in epitaxial films of LaMnO3 manganites grown by magnetron sputtering
- 2013
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Ingår i: Technical Physics Letters. - 1090-6533 .- 1063-7850. ; 39:12, s. 1027-1030
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Tidskriftsartikel (refereegranskat)abstract
- We have studied thin films of LaMnO3 manganite grown by RF magnetron sputtering at high pressure on crystalline substrates with cubic symmetry. It is established that these films exhibit a metal-insulator transition, whereas LaMnO3 grown on orthorhombic substrates remains in a dielectric state. The parameters of the metal-insulator transition have been studied as dependent on the level and symmetry of mechanical stresses that arise during the epitaxial growth of LaMnO3 films on various substrates. The resistance of LaMnO3 films grown on SrTiO3 substrates has been studied as a function of the film thickness. It is found that the presence of excess oxygen due to substitution in the cation system can significantly influence the Mn4+/Mn3+ ion ratio in the film and thus lead to the appearance of the metal-insulator transition.
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4. |
- Ivanov, A M, et al.
(författare)
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High-resolution short range ion detectors based on 4H-SiC films
- 2004
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Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 30:7, s. 575-577
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Tidskriftsartikel (refereegranskat)abstract
- The energy resolution of SiC detectors has been studied in application to the spectrometry of alpha particles with 5.1-5.5 MeV energies. The Schottky barrier structure of the detector was based on a CVD-grown epitaxial n-4H-SiC film with a thickness of 26 mum and an uncompensated donor concentration of (1-2) x 10(15) cm(-3). An energy resolution of 0.5% achieved for the first time with SiC detectors allows fine structure of the alpha particle spectrum to be revealed. The average energy of the electron-hole pair formation in 4H-SiC is estimated at 7.71 eV.
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6. |
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7. |
- Kucherenko, S. S., et al.
(författare)
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The P-H-T effects on the electric resistance and magnetoresistance of La0.7Sr0.1Pb0.2MnO3 single crystal films
- 2001
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Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 27:6, s. 451-453
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Tidskriftsartikel (refereegranskat)abstract
- The effects of high hydrostatic pressures (P) and magnetic fields (H) in a broad temperature range (T = 77-325 K) on the electric resistance (R) and magnetoresistance (DeltaR/R-0) was studied in laser-deposited La0.7Sr0.1Pb0.2MnO3 single crystal films on (100)-oriented SrTiO3 substrates. A maximum response to the P and H variations was observed in the temperature interval of phase transitions (T = 310-325 K). A growth in the pressure P leads to an increase in both R and DeltaR/R-0 values, while an increase in the magnetic field strength H is accompanied by an increase in DeltaR/R-0 and a drop in the electric resistance R of the single crystal films studied.
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8. |
- Lebedev, A.A., et al.
(författare)
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Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
- 2007
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Ingår i: Technical physics letters. - 1063-7850 .- 1090-6533. ; 33:6, s. 524-526
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial 3C-SiC films grown on the (0001)C face of 6H-SiC substrates by sublimation epitaxy in vacuum have been studied. The results of x-ray diffraction measurements show evidence of a rather high structural perfection of silicon carbide epilayers. The Raman spectroscopy data confirm that the 3C-SiC layer grows immediately on the 6H-SiC substrate without any transition layers. It is concluded that the structures under consideration are well suited for the investigation of a two-dimensional electron gas at the 3C-SiC/6C-SiC heterojunction. © Nauka/Interperiodica 2007.
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9. |
- Putrolaynen, V. V., et al.
(författare)
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Anti-Scratch AlMgB14 Gorilla (R) Glass Coating
- 2017
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Ingår i: Technical physics letters. - : Maik Nauka/Interperiodica. - 1063-7850 .- 1090-6533. ; 43:10, s. 871-874
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Tidskriftsartikel (refereegranskat)abstract
- Hard aluminum-magnesium boride (BAM) films were fabricated onto Corning (R) Gorilla (R) Glass by radio-frequency magnetron sputtering of a single stoichiometric AlMgB14 target. BAM films exhibit a Vickers hardness from 10 to 30 GPa and a Young's modulus from 80 to 160 GPa depending on applied loading forces. Deposited hard coating increases the critical load at which glass substrate cracks. The adhesion energy of BAM films on Gorilla (R) Glass is 6.4 J/m(2).
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10. |
- Vendik, Irina, et al.
(författare)
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Full-wave analysis of fundamental modes of a multicoupled strip line with ferroelectric film
- 2005
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Ingår i: Technical Physics Letters. - : Pleiades Publishing Ltd. - 1090-6533 .- 1063-7850. ; 31:1, s. 68-71
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Tidskriftsartikel (refereegranskat)abstract
- The properties of a multicoupled microstrip line (MSL) with a thin control ferroelectric layer have been analyzed in terms of a full-wave model based on the method of moments in spectral domain. The Q values for all fundamental modes and their contributions to MSL losses are determined. It is established that various fundamental modes in multicoupled MSLs are characterized by significantly different Q values. The proposed method has been applied to the analysis of characteristics of an MSL-based ferroelectric microwave phase shifter. The figure of merit F of the phase shifter has been calculated for each fundamental mode. The results of analysis lead to a conclusion that, by exciting a fixed mode characterized by the maximum Q value, it is possible to obtain an MSL-based phase shifter possessing the optimum F at a minimum necessary level of the control voltage. © 2005 Pleiades Publishing, Inc.
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