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| 2. |
- Illarionov, Yu Yu, et al.
(författare)
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Bias-temperature instability in single-layer graphene field-effect transistors
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:14, s. 143507-
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Tidskriftsartikel (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.
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| 3. |
- Illarionov, Yu.Yu., et al.
(författare)
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Bias-temperature instability in single-layer graphene field-effect transistors : A reliability challenge
- 2014
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Ingår i: 2014 Silicon Nanoelectronics Workshop, SNW 2014. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479956777
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Konferensbidrag (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors (GFETs). We demonstrate that the dynamics can be systematically studied when the degradation is expressed in terms of a Dirac point voltage shift. Under these prerequisites it is possible to understand and benchmark both NBTI and PBTI using models previously developed for Si technologies. In particular, we show that the capture/emission time (CET) map approach can be also applied to GFETs and that recovery in GFETs follows the same universal relaxation trend as their Si counterparts. While the measured defect densities can still be considerably larger than those known from Si technology, the dynamics of BTI are in general comparable, allowing for quantitative benchmarking of the graphene/dielectric interface quality.
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| 4. |
- Illarionov, Yu.Yu., et al.
(författare)
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Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
- 2015
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Ingår i: IEEE International Reliability Physics Symposium Proceedings. - : IEEE conference proceedings. - 9781467373623 ; , s. XT21-XT26
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Konferensbidrag (refereegranskat)abstract
- We report a first study of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs). Our results show that HCD in GFETs is recoverable, similarly to the bias-temperature instability (BTI). Depending on the top gate bias polarity, the presence of HCD may either accelerate or suppress BTI. Contrary to BTI, which mainly results in a change of the charged trap density in the oxide, HCD also leads to a mobility degradation which strongly correlates with the magnitude of the applied stress.
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| 5. |
- Illarionov, Y., et al.
(författare)
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Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors
- 2015
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Ingår i: European Solid-State Device Research Conference. - : IEEE. - 9781467371339 ; , s. 172-175
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Konferensbidrag (refereegranskat)abstract
- We examine the interplay between the degradations associated with the bias-temperature instability (BTI) and hot carrier degradation (HCD) in single-layer double-gated graphene field-effect transistors (GFETs). Depending on the polarity of the applied BTI stress, the HCD component acting in conjuction can either accelerate or compensate the degradation. The related phenomena are studied in detail at different temperatures. Our results show that the variations of the charged trap density and carrier mobility induced by both contributions are correlated. Moreover, the electron/hole mobility behaviour agrees with the previously reported attractive/repulsive scattering asymmetry.
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| 6. |
- Illarionov, Y.Yu., et al.
(författare)
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Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors
- 2016
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Ingår i: Japanese Journal of Applied Physics. - : Institute of Physics (IOP). - 0021-4922 .- 1347-4065. ; 55:4
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Tidskriftsartikel (refereegranskat)abstract
- We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-k top gate and SiO2 back gate of the same device and show that SiO2 gate is more stable with respect to BTI.
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