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Sökning: WFRF:(Kapon E)

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  • Atlasov, K.A., et al. (författare)
  • Site-controlled single quantum wire integrated into a photonic-crystal membrane microcavity
  • 2007
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90, s. 153107-
  • Tidskriftsartikel (refereegranskat)abstract
    • Integration of a site-controlled semiconductor V-groove quantum wire (QWR) into a photonic-crystal (PhC) membrane microcavity is reported. Reproducible coupling of the QWR emission to a mode of the PhC cavity is evidenced by the narrower linewidth, higher intensity, and variation with temperature and PhC parameters of the QWR line. Finite difference time domain simulations of the cavity are employed for identifying the observed mode. The presented PhC-QWR coupled structures are promising for achieving very low-threshold lasers and for studies of one-dimensional photon-exciton coupled systems
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  • Byszewski, M., et al. (författare)
  • Magneto-photoluminescence of heavy- and light-hole excitons in site-controlled pyramidal quantum dots
  • 2008
  • Ingår i: Physica. E, Low-Dimensional systems and nanostructures. - : Elsevier BV. - 1386-9477 .- 1873-1759. ; 40:6, s. 1873-1875
  • Tidskriftsartikel (refereegranskat)abstract
    • Pyramidal, site-controlled InGaAs/AlGaAs quantum dots (QDs) are studied by micro-photoluminescence (PL) spectroscopy in a magnetic field. The light-hole (LH) excitonic transitions exhibit diamagnetic shifts similar to those of their heavy-hole (HH) counterparts. From the evolution of the excitonic lines, effective g-factors of g=1.7 and 0.4 for HH and LH neutral excitons are inferred
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  • Dupertuis, M A, et al. (författare)
  • Symmetries and the Polarized Optical Spectra of Exciton Complexes in Quantum Dots
  • 2011
  • Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 107:12, s. 127403-
  • Tidskriftsartikel (refereegranskat)abstract
    • A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, and predict original features for low C(2 nu) and high C(3 nu) symmetries. Excellent agreement with single quantum dot spectroscopy of real pyramidal InGaAs/AlGaAs quantum dots grown along [111] is demonstrated. The high sensitivity of biexciton quantum states to exact high symmetry can be turned into an efficient uninvasive postgrowth selection procedure for quantum entanglement applications.
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  • Karlsson, Fredrik, et al. (författare)
  • Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation
  • 2010
  • Ingår i: PHYSICAL REVIEW B. - : American Physical Society. - 1098-0121. ; 81:16, s. 161307-
  • Tidskriftsartikel (refereegranskat)abstract
    • Quantum dots (QDs) of high symmetry (e.g., C-3 nu) have degenerate bright exciton states, unlike QDs of C-2 nu symmetry, making them intrinsically suitable for the generation of entangled photon pairs. Deviations from C-3 nu symmetry are detected in real QDs by polarization-resolved photoluminescence spectroscopy in side-view geometry of InGaAs/AlGaAs dots formed in tetrahedral pyramids. The theoretical analysis reveals both an additional symmetry plane and weak symmetry breaking, as well as the interplay with electron-hole and hole-hole exchange interactions manifested by the excitonic fine structure.
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  • Karlsson, Fredrik, 1974-, et al. (författare)
  • Optical polarization anisotropy and hole states in pyramidal quantum dots
  • 2006
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89, s. 251113-
  • Tidskriftsartikel (refereegranskat)abstract
    • The authors present a polarization-resolved photoluminescence study of single semiconductor quantum dots (QDs) interconnected to quantum wires, measured both in a top geometry, and in a less conventional cleaved-edge geometry. Strong polarization anisotropy is revealed for all observed transitions, and it is deduced that closely spaced QD hole states exhibit nearly pure heavy-or light-hole character. These effects are attributed to the large aspect ratio of the dot shape
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  • Karlsson, K Fredrik, et al. (författare)
  • Spectral signatures of high-symmetry quantum dots and effects of symmetry breaking
  • 2015
  • Ingår i: New Journal of Physics. - : Institute of Physics Publishing (IOPP). - 1367-2630. ; 17:10
  • Tidskriftsartikel (refereegranskat)abstract
    • High symmetry epitaxial quantum dots (QDs) with three or more symmetry planes provide a very promising route for the generation of entangled photons for quantum information applications. The great challenge to fabricate nanoscopic high symmetry QDs is further complicated by the lack of structural characterization techniques able to resolve small symmetry breaking. In this work, we present an approach for identifying and analyzing the signatures of symmetry breaking in the optical spectra of QDs. Exciton complexes in InGaAs/AlGaAs QDs grown along the [111]B crystalline axis in inverted tetrahedral pyramids are studied by polarization resolved photoluminescence spectroscopy combined with lattice temperature dependence, excitation power dependence and temporal photon correlation measurements. By combining such a systematic experimental approach with a simple theoretical approach based on a point-group symmetry analysis of the polarized emission patterns of each exciton complex, we demonstrate that it is possible to achieve a strict and coherent identification of all the observable spectral patterns of numerous exciton complexes and a quantitative determination of the fine structure splittings of their quantum states. This analysis is found to be particularly powerful for selecting QDs with the highest degree of symmetry ( C 3 v and ##IMG## [http://ej.iop.org/images/1367-2630/17/10/103017/njp519062ieqn1.gif] $D_3h$ ) for potential applications of these QDs as polarization entangled photon sources. We exhibit the optical spectra when evolving towards asymmetrical QDs, and show the higher sensitivity of certain exciton complexes to symmetry breaking.
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  • Karlsson, K Fredrik, et al. (författare)
  • Symmetry Elevation and Symmetry Breaking : Keys to Describe and Explain Excitonic Complexes in Semiconductor Quantum Dots
  • 2011
  • Ingår i: AIP Conference Proceedings. - : AIP. - 0094-243X.
  • Konferensbidrag (refereegranskat)abstract
    • The results of a group theoretical analysis of the excitonic fine structure are presented and compared with spectroscopic data on single quantum dots. The spectral features reveal the signatures of a symmetry higher than the crystal symmetry (C 3v ).  A consistent picture of the fine structure patterns for various exciton complexes is obtained with group theory and the concepts of symmetry elevation and symmetry breaking.
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  • Leifer, Klaus, et al. (författare)
  • Narrow (= 4 meV) inhomogeneous broadening and its correlation with confinement potential of pyramidal quantum dot arrays
  • 2007
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:8, s. 081106-081106-3
  • Tidskriftsartikel (refereegranskat)abstract
    • The inhomogeneous broadening in the luminescence spectra of ordered arrays of pyramidal GaAsAlGaAs semiconductor quantum dots (QDs) was studied as a function of the dot size. Dot arrays with inhomogeneous broadening as small as 4.1 meV and a corresponding ground state to first excited state transition separation of 28 meV were obtained. By evaluating the QD energy levels using a multiband kp model, the authors estimated that the observed inhomogeneous broadening corresponds to dot height fluctuations of about 1-2 ML across the array.
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  • Malko, A., et al. (författare)
  • Optimization of the efficiency of single-photon sources based on quantum dots under optical excitation
  • 2006
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88, s. 081905-
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate efficient, regulated single-photon operation from site-controlled InGaAs quantum dots (QDs) grown on a prepatterned substrate. Under nonresonant optical excitation, carriers trapped at structural or compositional defects of the adjacent nanostructures led to a degradation of the single-photon statistics from a QD. When the QD was excited quasiresonantly, single photons were emitted and a nearly complete suppression of multiphoton emission was achieved, making these QDs promising candidates for effective solid-state single-photon sources
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19.
  • Malko, A., et al. (författare)
  • Single-photon emission from pyramidal quantum dots : The impact of hole thermalization on photon emission statistics
  • 2005
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 72, s. 195332-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report an experimental study of the emission statistics of excitonic complexes from a single quantum dot and their temperature dependence. The single photon emission from the exciton ground state is shown to persist up to 80  K. The deterioration of single photon statistics is attributed to new biexciton emissions, which emerge in the vicinity of the main single-exciton peak at rising temperatures. We identify these biexcitonic states as being formed by either one hole or two holes occupying excited states and analyze their specific polarization and power-dependent signature.
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  • Pelucchi, E, et al. (författare)
  • Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures
  • 2011
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83, s. 205409-1-205409-12
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots form as a consequence of a self-limiting profile that develops, respectively, at the bottom of V-grooves and inverted pyramids. Our model is based on a system of reaction-diffusion equations, one for each crystallographic facet that defines the pattern, and include the group III precursors, their decomposition and diffusion kinetics (for which we discuss the experimental evidence), and the subsequent diffusion and incorporation kinetics of the group-III atoms released by the precursors. This approach can be applied to any facet configuration, including pyramidal quantum dots, but we focus on the particular case of V-groove templates and offer an explanation for the self-limited profile and the Ga segregation observed in the V-groove. The explicit inclusion of the precursor decomposition kinetics and the diffusion of the atomic species revises and generalizes the earlier work of Biasiol et al. [Biasiol et al., Phys. Rev. Lett. 81, 2962 (1998); Phys. Rev. B 65, 205306 (2002)] and is shown to be essential for obtaining a complete description of self-limiting growth. The solution of the system of equations yields spatially resolved adatom concentrations, from which average facet growth rates are calculated. This provides the basis for determining the conditions that yield self-limiting growth. The foregoing scenario, previously used to account for the growth modes of vicinal GaAs(001) and the step-edge profiles on the ridges of vicinal surfaces patterned with V-grooves during metalorganic vapor-phase epitaxy, can be used to describe the morphological evolution of any template composed of distinct facets.
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  • Pelucchi, E., et al. (författare)
  • Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates
  • 2007
  • Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 7:5, s. 1282-1285
  • Tidskriftsartikel (refereegranskat)abstract
    • A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing. © 2007 American Chemical Society.
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24.
  • Reichardt, H., et al. (författare)
  • Influence of long-range substrate roughness on disorder in V-groove quantum wire structures
  • 2006
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100, s. 123509-
  • Tidskriftsartikel (refereegranskat)abstract
    • The observation and the interpretation of line splitting in photoluminescence and cathodoluminescence spectra of GaAs/AlGaAs V-groove quantum wires (QWRs) are reported. The QWR emission line splits into two peaks whose intensities oscillate systematically along the axis of the wire. Combining atomic force microscopy and cathodoluminescence measurements, we show a clear correlation between the surface topography of the V-groove and the individual peak intensities. We elucidate the relationship between the V-groove sidewall roughness and the shape at its bottom, and explain their impact on the QWR formation using a two-dimensional growth model accounting for self-limited growth in each V-groove domain. The influence of the long-range substrate roughness on the QWR spectral features is thus clarified. The study provides guidelines for improving QWR uniformity in order to achieve near-ideal model systems for one-dimensional semiconductors
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25.
  • Streubel, K., et al. (författare)
  • Novel technologies for 1.55-mu m vertical cavity lasers
  • 2000
  • Ingår i: Optical Engineering. - : SPIE-Intl Soc Optical Eng. - 0091-3286 .- 1560-2303. ; 39:2, s. 488-497
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz.
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  • Troncale, V., et al. (författare)
  • Control of valence band states in pyramidal quantum dot-in-dot semiconductor heterostructures
  • 2007
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:24
  • Tidskriftsartikel (refereegranskat)abstract
    • The character of the hole states in a pyramidal GaAsAlGaAs quantum dot-in-dot (DiD) heterostructure is shown to be controllable by tailoring the confinement potential shape. The change in ground valence band state from heavy hole like to light hole like is demonstrated by side-view polarization resolved photoluminescence measurements. The experimental findings are supported by three-dimensional numerical model calculations. The results are applicable for polarization control in quantum dot photonic devices. © 2007 American Institute of Physics.
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28.
  • Troncale, V., et al. (författare)
  • Excited excitonic states observed in semiconductor quantum dots using polarization resolved optical spectroscopy
  • 2007
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101, s. 081703-
  • Tidskriftsartikel (refereegranskat)abstract
    • We present results on the polarization-resolved photoluminescence emitted from InGaAs/AlGaAs single quantum dots (QDs) grown in inverted tetrahedral pyramids. The emitted light was detected for two mutually perpendicular linear polarization directions in the less conventional cleaved-edge geometry, in addition to the standard top-emission geometry. Whereas the in-plane linear polarization was isotropic, as a consequence of the high symmetry of the system, we found a strong polarization anisotropy of the edge-emitted light revealing QD states of predominantly heavy- or light-hole character. By temperature control of the charge state, several neutral and charged light-hole like exciton complexes were identified. In particular, a biexciton showing a twofold radiative recombination path, leading to two nearly perpendicularly polarized emission multiplets, was identified. These results are also of technological relevance for any design of optoelectronic QD-integrated devices
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  • Zhu, Qing, et al. (författare)
  • Alloy segregation, quantum confinement, and carrier capture in self-ordered pyramidal quantum wires
  • 2006
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 6:5, s. 1036-1041
  • Tidskriftsartikel (refereegranskat)abstract
    • The structure and photoluminescence (PL) characteristics of AlGaAs quantum wires self-formed by metallorganic vapor-phase epitaxy in inverted tetrahedral pyramids are reported. Capillarity-driven Ga-Al segregation yields vertical quantum wires (VQWRs) at the center of the pyramid, connected to more-weakly segregated vertical quantum wells (VQWs) formed along their wedges. The segregation is evidenced in transmission electron microscope images and in the PL spectra of these structures. Transitions between quantum-confined electron and hole states in the VQWR are identified in the micro-PL spectra with energies in good agreement with model calculations. The temperature dependence of the micro-PL spectra clearly reveals efficient carrier capture into the VQWR from the VQWs, particularly at an intermediate temperature range ( [similar to] 100 K) where carrier mobility is enhanced. These wires offer new possibilities for tailoring the confinement potential in one-dimensional systems.
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  • Zhu, Q., et al. (författare)
  • Pyramidal GaAs/AlzGa1-zAs quantum wire/dot systems with controlled heterostructure potential
  • 2010
  • Ingår i: Phys. Rev. B. ; 82
  • Tidskriftsartikel (refereegranskat)abstract
    • The structural and optical properties of controlled-heterostructure-potential, low-dimensional GaAs/AlGaAs nanostructures self-formed during organometallic chemical vapor deposition in tetrahedral pyramids etched in (111)B-GaAs substrates, are investigated using electron microscopy, cathodoluminescence, photoluminescence (PL), photon correlation spectroscopy, and theoretical modeling. Quantum wires/dots with AlGaAs cores with growth-controlled dimensions are formed, with a system of well-defined, low-dimensional nanostructure barriers around them. Transitions between carrier states confined in the AlGaAs quantum wires and dots are identified in the PL spectra, with features in good agreement with model calculations. Emission of single-photons and bunched-photon pairs is observed using temporal photon correlation spectroscopy. This self-formed nanostructure system provides new ways for shaping low-dimensional quantum structures and their heterostructure environment.
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  • Zhu, Q., et al. (författare)
  • Quantum dot molecules realized with modulated quantum wire heterostructrues
  • 2008
  • Ingår i: Physica. E, Low-Dimensional systems and nanostructures. - : Elsevier BV. - 1386-9477 .- 1873-1759. ; 40:6, s. 1815-1818
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on double-quantum dot (QD) molecules realized with modulated quantum wire (QWR) heterostructures by self-limiting growth of AlGaAs alloys in inverted tetrahedral pyramids. The QWR barriers connecting the dots facilitate the tunnel-coupling between the confined carriers. Evidences for the presence of such coupling are provided by conventional micro-photoluminescence measurements and theoretical modeling. Systematically tuning the relative QD sizes in the QD molecules reveals spectral line splitting consistent with the expected level splitting due to carrier hybridization. Prospects for extension of these structures to larger QD superlattices are discussed.
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  • Zhu, Q., et al. (författare)
  • Transition from Two-Dimensional to Three-Dimensional Quantum Confinement in Semiconductor Quantum Wires/Quantum Dots
  • 2007
  • Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 7:8, s. 2227-2233
  • Tidskriftsartikel (refereegranskat)abstract
    • We report the photoluminescence (PL) and polarization-resolved PL characteristics of a novel GaAs/AlGaAs quantum wire/dot semiconductor system, realized by metalorganic vapor-phase epitaxy of site-controlled, self-assembled nanostructures in inverted tetrahedral pyramids. By systematically changing the length of the quantum wires, we implement a continuous transition between the regimes of two-dimensional and three-dimensional quantum confinement. The two main evidences for this transition are observed experimentally and confirmed theoretically: (i) strongly blue-shifted ground-state emission, accompanied by increase separation of ground and excited transition energies; and (ii) change in the orientation of the main axis of linear polarization of the photoluminescence, from parallel to perpendicular with respect to the wire axis. This latter effect, whose origin is shown to be purely due to quantum confinement and valence band mixing, sets in at wire lengths of only 30 nm.
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  • Atlasov, K. A., et al. (författare)
  • Site-controlled quantum-wire and quantum-dot photonic-crystal microcavity lasers
  • 2010
  • Ingår i: Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE. - 9781424452415 ; , s. 149-150
  • Konferensbidrag (refereegranskat)abstract
    • Based on site- and energy-controlled quantum wires (QWR) and quantum dots (QD), diverse photonic-crystal microcavity laser systems are proposed and discussed. Results demonstrating QWR lasing, cavity coupling and QD ordered arrays are presented.
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  • Resultat 1-50 av 79

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