| 1. |
- Coll, M., et al.
(author)
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Towards Oxide Electronics: a Roadmap
- 2019
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In: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 482, s. 1-93
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Journal article (peer-reviewed)abstract
- At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore’s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. Oxide science and technology has been the target of a wide four-year project, named Towards Oxide-Based Electronics (TO-BE), that has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries. In this review and perspective paper, published as a final deliverable of the TO-BE Action, the opportunities of oxides as future electronic materials for Information and Communication Technologies ICT and Energy are discussed. The paper is organized as a set of contributions, all selected and ordered as individual building blocks of a wider general scheme. After a brief preface by the editors and an introductory contribution, two sections follow. The first is mainly devoted to providing a perspective on the latest theoretical and experimental methods that are employed to investigate oxides and to produce oxide-based films, heterostructures and devices. In the second, all contributions are dedicated to different specific fields of applications of oxide thin films and heterostructures, in sectors as data storage and computing, optics and plasmonics, magnonics, energy conversion and harvesting, and power electronics.
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| 2. |
- Nucara, A., et al.
(author)
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Infrared study of the quasi-two-dimensional electron system at the interface between SrTiO3 and crystalline or amorphous LaAlO3
- 2018
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In: Physical Review B. - 2469-9969 .- 2469-9950. ; 97:15
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Journal article (peer-reviewed)abstract
- We have used grazing-angle infrared spectroscopy to detect the Berreman effect (BE) in the quasi-two-dimensional electron system (q-2DES) which forms spontaneously at the interface between SrTiO 3 (STO) and a thin film of LaAlO 3 (LAO). From the BE, which allows one to study longitudinal optical excitations in ultrathin films like the q-2DES, we have extracted at different temperatures its thickness, the charge density and mobility of the carriers under crystalline LAO (sample A), and the charge density under amorphous LAO (sample B). The latter quantity turns out to be higher than in sample A, but a comparison with Hall measurements shows that under amorphous LAO the charges are partly localized at low T with a low activation energy (about 190 K in units of kB) and are thermally activated according to a model for large polarons. The thickness of the q-2DES extracted from our spectra turns out to be 4±1 nm for crystalline LAO and 7±2 nm for amorphous LAO.
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| 3. |
- Calvani, P., et al.
(author)
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Infrared spectroscopy of two-dimensional electron systems
- 2019
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In: European Physical Journal: Special Topics. - : Springer Science and Business Media LLC. - 1951-6401 .- 1951-6355. ; 228:3, s. 669-673
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Journal article (peer-reviewed)abstract
- © 2019, EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature. We have used grazing-angle infrared spectroscopy with polarized radiation to detect the Berreman effect (BE) in the two-dimensional electron systems (2DES) which form spontaneously at two interfaces: one between an amorphous film LaAlO3 and its SrTiO3 substrate (LAO/STO), and another at the interface between the topological insulator (TI) Bi2Se3 and its sapphire substrate. In both systems we have thus extracted the 2DES parameters at different temperatures. In the quasi-2DES under amorphous LAO, the surface density ns is higher than under crystalline LAO, while the mobility is nearly the same and the thickness d is 7 nm. In ultrapure Bi2Se3 on sapphire, preliminary data provided d
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| 4. |
- Nucara, A., et al.
(author)
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Hardening of the soft phonon in bulk SrTiO3 interfaced with LaAlO3 and SrRuO3
- 2016
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In: Physical Review B. - 2469-9969 .- 2469-9950. ; 93:22
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Journal article (peer-reviewed)abstract
- The low-temperature softening of the TO1 phonon of SrTiO3 (STO), which determines its incipient ferroelectricity, is known to be partially hindered either in the bulk under strong electric fields, or in thin STO films. Here we show, by terahertz (THz) reflectivity measurements, that a similar effect is produced in bulk STO and at zero static field by ultrathin metallic films on its surface, like a 10-nm-thick film of SrRuO3 (SRO), or the two-dimensional electron system (2DES) present at the interface with LaAlO3. In SRO/STO, the observed hardening is well explained by the depolarizing action of the SRO free electrons which follow adiabatically the ion motion. In LAO/STO, a weaker TO1 hardening could be detected by patterning the 2DES in the form of microstripes and using a polarized THz field parallel (E-) or orthogonal (E-) to the stripes. At 10 K, when TO1 is excited together with the free electrons by E-, its absorbance is harder by about 7 cm-1 than that measured when TO1 is coupled to the plasmon-polariton confined within the stripes, being excited by E-.
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