1. |
- LELAY, G, et al.
(författare)
-
ELECTRONIC-PROPERTIES OF CLEAVED(110) AND MBE-GROWN(100) INAS SURFACES, CLEAN AND COVERED WITH AN ULTRA-THIN AG ADLAYER
- 1993
-
Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 70-1, s. 502-506
-
Tidskriftsartikel (refereegranskat)abstract
- The initial electronic structure of the pseudomorphic InAs/GaAs(100) heterostructure as well as that of the Ag/InAs(110) interface at 20 K have been studied by synchrotron radiation photoelectron spectroscopy. In the first case we find that the valence band spectra show no evidence for the formation of bulk-like energy bands. In the second case we prove for the first time that upon deposition of minute amounts of Ag at low temperature onto cleaved InAs(110) substrates one induces a giant movement of the Fermi level well into the conduction band thus creating a strong two-dimensional electron channel at the surface.
|
|