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- Olsson, Fredrik, et al.
(author)
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Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration
- 2007
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In: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 3:39, s. 23-29
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Journal article (peer-reviewed)abstract
- Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.
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