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- Kilpi, Olli-Pekka, et al.
(författare)
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Vertical nanowire III–V MOSFETs with improved high-frequency gain
- 2020
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:13, s. 669-671
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Tidskriftsartikel (refereegranskat)abstract
- High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.
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