SwePub - sökning: id:"swepub:oai:lup.lub.lu.se:8...

Träfflista för sökning "id:"swepub:oai:lup.lub.lu.se:837c7b32-572e-476f-915e-068d9171406b" "

Sökning: id:"swepub:oai:lup.lub.lu.se:837c7b32-572e-476f-915e-068d9171406b"

Sortera/gruppera träfflistan

Sortering: Träffar per sida:

Numrering	Referens	Omslagsbild	Hitta
1.	Wen, C. -Y., et al. (författare) Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires 2011 Ingår i: Physical Review Letters. - 1079-7114. ; 107:2 Tidskriftsartikel (refereegranskat)abstract Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.

Skapa referenser, mejla, bekava och länka

Träfflista för sökning "id:"swepub:oai:lup.lub.lu.se:837c7b32-572e-476f-915e-068d9171406b" "