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- Lemme, Max C., 1970-, et al.
(författare)
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Subthreshold characteristics of p-type triple-gate MOSFETs
- 2003
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Ingår i: ESSDERC 2003. - NEW YORK : IEEE. ; , s. 123-126
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Konferensbidrag (refereegranskat)abstract
- The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, output and transfer characteristics of 70nm printed gate length p-MOSFETs with 22nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.
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