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Träfflista för sökning "WFRF:(Ferreira C.) srt2:(2000-2004)"

Sökning: WFRF:(Ferreira C.) > (2000-2004)

  • Resultat 11-17 av 17
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11.
  • Ahuja, R., et al. (författare)
  • Optical properties of 4H-SiC
  • 2002
  • Ingår i: J. Appl. Phys.. ; 91:4, s. 2099-2103
  • Tidskriftsartikel (refereegranskat)
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12.
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13.
  • Blanco, A, et al. (författare)
  • Progress in timing Resistive Plate Chambers
  • 2004
  • Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - 0168-9002 .- 1872-9576. ; 535:1-2, s. 272-276
  • Tidskriftsartikel (refereegranskat)abstract
    • Timing RPCs are Resistive Plate Chambers made with glass and metal electrodes separated by precision spacers. Typical gas gaps are a few hundred micrometers wide. Such counters were introduced in 1999 and have since reached timing accuracies below 50 ps sigma with efficiencies above 99% for MIPs. Applications in high-energy physics have already taken place with several more under study. Some recent developments include the extension of the counting rate capability by over one order of magnitude, to 25 kHz/cm(2), with time resolutions below 100 ps sigma. A prototype RPC-based Positron Emission Tomograph yielded a reconstructed point-source resolution of 0.6 mm FWHM and a modified timing RPC design, featuring 50 mum pitch anode strips, allowed to reach extremely good position resolution for hard X-rays in digital readout mode. An analytically solvable model has allowed us to clarify the basic factors influencing the time resolution.
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15.
  • Moyses, Araujo C., et al. (författare)
  • Band-gap shift of the heavily doped single- and double-donor systems Si : Bi and Si
  • 2000
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:19, s. 12882-12887
  • Tidskriftsartikel (refereegranskat)abstract
    • The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different many-body effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.
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17.
  • Souza De Almeida, J., et al. (författare)
  • Optical properties of donor-triad cluster in GaAs and GaN
  • 2002
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:17, s. 3158-3160
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.
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  • Resultat 11-17 av 17

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