| 1. |
- Seifert, Werner, et al.
(författare)
-
Growth of one-dimensional nanostructures in MOVPE
- 2004
-
Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 211-220
-
Tidskriftsartikel (refereegranskat)abstract
- The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.
|
|
| 2. |
- Borgström, Magnus, et al.
(författare)
-
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- 2003
-
Ingår i: Journal of Crystal Growth. - 0022-0248. ; 248, s. 310-316
-
Tidskriftsartikel (refereegranskat)abstract
- In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
|
|
| 3. |
- Borgström, Magnus, et al.
(författare)
-
Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- 2002
-
Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
-
Konferensbidrag (refereegranskat)abstract
- We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
|
|
| 4. |
- Bryllert, Tomas, et al.
(författare)
-
Designed emitter states in resonant tunneling through quantum dots
- 2002
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:15, s. 2681-2683
-
Tidskriftsartikel (refereegranskat)abstract
- Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. (C) 2002 American Institute of Physics.
|
|
| 5. |
- Bryllert, Tomas, et al.
(författare)
-
Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
- 2002
-
Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
-
Konferensbidrag (refereegranskat)abstract
- Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment
|
|
| 6. |
- Carlberg, Patrick, et al.
(författare)
-
Nanoimprint - a tool for realizing nano-bio research
- 2004
-
Ingår i: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
-
Konferensbidrag (refereegranskat)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
|
|
| 7. |
- Sass, T, et al.
(författare)
-
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
- 2003
-
Ingår i: Journal of Crystal Growth. - 0022-0248. ; 248, s. 375-379
-
Tidskriftsartikel (refereegranskat)abstract
- We studied the morphology of GaP/(001)GaAs and GaAs/(001)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [110] direction. We attribute this elongation to anisotropic lateral growth rates in the [110] and [110] directions, which are due to a different roughness of monolayer surface steps. In III-V materials grown by molecular beam epitaxy. such surface corrugations are usually elongated in [110]. We explain this difference by the two growth methods having inverted ratios of lateral growth rates in [110] and [110]. Resonant tunnelling diodes fabricated from the GaP/GaAs heterostructures showed very symmetric I-V characteristics. Their peak-to-valley ratio was limited to 2. most probably due to the corrugation of the GaP barriers. (C) 2002 Elsevier Science B.V. All rights reserved.
|
|
| 8. |
- Wernersson, Lars-Erik, et al.
(författare)
-
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
- 2002
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:10, s. 1841-1843
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5.
|
|
| 9. |
- Wernersson, Lars-Erik, et al.
(författare)
-
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
- 2002
-
Ingår i: Applied Surface Science. - 1873-5584. ; 190:1, s. 252-257
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied the epitaxial growth and electrical performance of Al-free, GaAs-based, resonant tunnelling diodes (RTDs) including thin barriers of GaInP, GO, or GaAsxP1-x. n-Type tunnelling diodes have been fabricated and the symmetry in the current-voltage (I-V) characteristics, as well as the peak-to-valley ratios, are found to be sensitive probes for the inter-face quality in the heterostructures. For GaInP RTDs, we show that the introduction of Gap intermediate layers is crucial for the realisation. of a useful tunnelling current. RTDs including thin barriers (less than about 10 monolayers (ML)) of Gap are realised, but the strong mismatch between the materials limit the useful thickness. Finally, RTDs with GaAslambdaP1-x alloys are fabricated showing the best peak-to-valley ratio of the diodes (about 5), as well as a symmetric I-V characteristics. The electrical data are further compared to studies by transmission electron microscopy (TEM) in the various material systems.
|
|
