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| 3. |
- Buyanova, Irina, 1960-, et al.
(author)
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On the origin of spin loss in GaMnN/InGaN Light-Emitting Diodes
- 2004
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84, s. 2599-
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Journal article (peer-reviewed)abstract
- Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.
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| 4. |
- Buyanova, Irina, 1960-, et al.
(author)
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Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
- 2004
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In: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 33:5, s. 467-471
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Journal article (peer-reviewed)abstract
- (Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.
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| 5. |
- Buyanova, Irina, 1960-, et al.
(author)
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Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
- 2004
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In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 22:6, s. 2668-2672
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Journal article (peer-reviewed)abstract
- The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.
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- Chen, Weimin, 1959-, et al.
(author)
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Efficient spin depolarization in ZnCdSe spin detector : an important factor limiting optical spin injection efficiency in ZnMnSe/CdZnSe spin light-emitting structures
- 2004
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 5260-
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Journal article (peer-reviewed)abstract
- Spin depolarization of a ZnCdSe quantum-well spin detector (SD) in ZnMnSe/ZnCdSe light-emitting quantum structures is investigated by cw and time-resolved optical orientation spectroscopy. It is shown that spin depolarization is governed by three distinct spin relaxation processes with the corresponding polarization decay times of 850, 30, and <10 ps. The dominant and the fastest process is attributed to spin relaxation accompanying energy relaxation of hot excitons (and hot carriers) within the SD, providing evidence that it can be an important source of spin loss, leading to the observed limited efficiency of optical spin injection in the structures.
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| 8. |
- Polyakov, A. Y., et al.
(author)
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Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
- 2004
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In: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 33:3, s. 241-247
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Journal article (peer-reviewed)abstract
- Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called -spin-LEDs-). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.
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| 9. |
- Buyanova, Irina A., et al.
(author)
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Optical properties of GaNAs/GaAs structures
- 2001
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In: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 82:1-3, s. 143-147
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Journal article (peer-reviewed)abstract
- We review our recent results on optical characterization of MBE-grown GaNAs/GaAs quantum structures with N content up to 4.5%, by employing photoluminescence (PL), PL excitation, and time-resolved PL spectroscopies. The dominant PL mechanism has been determined as recombination of excitons trapped by potential fluctuations of the band edge, due to composition disorder and strain nonuniformity of the alloy. The estimated value of the localization potential is around 60 meV for the low-temperature grown structures and can be reduced by increasing the growth temperature or using post-growth rapid thermal annealing (RTA). © 2001 Elsevier Science S.A.
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| 10. |
- Buyanova, Irina A., et al.
(author)
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Strain relaxation in GaNxP1-x alloy : Effect on optical properties
- 2001
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In: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 308-310, s. 106-109
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Journal article (peer-reviewed)abstract
- By using scanning electron microscopy and cathodoluminescence (CL), a decrease in radiative efficiency of GaNP alloy with increasing N content is seen due to the formation of structural defects. The defect formation is attributed to relaxation of tensile strain in the GaNP layer, which is lattice mismatched to GaP substrate. Several types of extended defects including dislocations, microcracks and pits are revealed in partly relaxed GaNxP1-x epilayers with x=1.9%, whereas coherently strained layers exhibit high crystalline quality for x up to 4%. According to the CL measurements, all extended defects act as competing, non-radiative channels leading to the observed strong decrease in the radiative efficiency. From CL mapping experiments, non-uniformity of strain distribution around the extended defects is partly responsible for the broadening of the photoluminescence (PL) spectra recorded in the macro-PL experiments. © 2001 Elsevier Science B.V. All rights reserved.
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