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- Kuznetsov, A.Yu., et al.
(författare)
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Diffusion of phosphorus in strained Si/SiGe/Si heterostructures
- 1999
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Ingår i: Materials Research Society Symposium - Proceedings. - San Francisco, CA, USA. ; 568:Warrendale, PA, United States, s. 271-276
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Tidskriftsartikel (refereegranskat)abstract
- Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810-900 °C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 in comparison with P diffusion in Si is observed. Injection of Si self-interstitials (I) during oxidation of a Si-cap in Si/Si0.87Ge0.13/Si heterostructures is used to characterize the atomic mechanism of P diffusion in Si0.87Ge0.13. It is found that the upper limit of the interstitial fraction of the P diffusion in Si0.87Ge0.13 is 0.87 of that in Si. A comparison between B and P diffusivities in SiGe supports the hypothesis of the pairing-controlled mechanism for the diffusion of B in SiGe.
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