| 1. |
- Booker, Ian Don, et al.
(författare)
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Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS
- 2014
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - : Trans Tech Publications. ; , s. 281-284
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Konferensbidrag (refereegranskat)abstract
- The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.
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| 2. |
- Arslan, Engin, et al.
(författare)
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SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
- 2014
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Ingår i: ELECTRONIC MATERIALS LETTERS. - : Springer Science and Business Media. - 1738-8090 .- 2093-6788. ; 10:2, s. 387-391
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Tidskriftsartikel (refereegranskat)abstract
- Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm(2)/Vs at 300 K) and one low-mobility carrier (1115 cm(2)/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.
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| 3. |
- Booker, Ian Don, et al.
(författare)
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Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
- 2014
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Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 14:8, s. 4104-4110
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Tidskriftsartikel (refereegranskat)abstract
- 4H-SiC epilayers grown by standard and chlorinated chemistry were analyzed for their minority carrier lifetime and deep level recombination centers using time-resolved photoluminescence (TRPL) and standard deep level transient spectroscopy (DLTS). Next to the well-known Z(1/2) deep level a second effective lifetime killer, RB1 (activation energy 1.05 eV, electron capture cross section 2 x 10(-16) cm(2), suggested hole capture cross section (5 +/- 2) x 10(-15) cm(2)), is detected in chloride chemistry grown epilayers. Junction-DLTS and bulk recombination simulations are used to confirm the lifetime killing properties of this level. The measured RB1 concentration appears to be a function of the iron-related Fe1 level concentration, which is unintentionally introduced via the corrosion of reactor steel parts by the chlorinated chemistry. Reactor design and the growth zone temperature profile are thought to enable the formation of RB1 in the presence of iron contamination under conditions otherwise optimal for growth of material with very low Z(1/2) concentrations. The RB1 defect is either an intrinsic defect similar to RD1/2 or EH5 or a complex involving iron. Control of these corrosion issues allows the growth of material at a high growth rate and with high minority carrier lifetime based on Z(1/2) as the only bulk recombination center.
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| 4. |
- Civrac, Gabriel, et al.
(författare)
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600 V PiN diodes fabricated using on-axis 4H silicon carbide
- 2012
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Ingår i: Materials Science Forum Vol 717 - 720. - : Trans Tech Publications Inc.. ; , s. 969-972
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Konferensbidrag (refereegranskat)abstract
- This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.
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| 5. |
- Henry, Anne, et al.
(författare)
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Epitaxial growth on on-axis substrates
- 2012
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Ingår i: Silicon Carbide Epitaxy. - Kerala, India : Research Signpost. - 9788130805009 ; , s. 97-119
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Bokkapitel (refereegranskat)abstract
- SiC epitaxial growth using the Chemical Vapour Deposition (CVD) technique on nominally on-axis substrate is presented. Both standard and chloride-based chemistry have been used with the aim to obtain high quality layers suitable for device fabrication. Both homoepitaxy (4H on 4H) and heteroepitaxy (3C on hexag onal substrate) are addressed.
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| 6. |
- Ivanov, Ivan Gueorguiev, et al.
(författare)
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High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure (SiC)-Si-28-C-12, Natural and C-13 - Enriched 4H-SIC
- 2014
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Ingår i: Silicon Carbide and Related Materials 2013, PTS 1 AND 2. - : Trans Tech Publications Inc.. ; , s. 471-474
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Konferensbidrag (refereegranskat)abstract
- The optical properties of isotope-pure (SiC)-Si-28-C-12, natural SiC and enriched with C-13 isotope samples of the 4H polytype are studied by means of Raman and photoluminescence spectroscopies. The phonon energies of the Raman active phonons at the Gamma point and the phonons at the M point of the Brillouin zone are experimentally determined. The excitonic bandgaps of the samples are accurately derived using tunable laser excitation and the phonon energies obtained from the photoluminescence spectra. Qualitative comparison with previously reported results on isotope-controlled Si is presented.
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| 7. |
- Ivanov, Ivan Gueorguiev, et al.
(författare)
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Layer-number determination in graphene on SiC by reflectance mapping
- 2014
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 77, s. 492-500
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Tidskriftsartikel (refereegranskat)abstract
- We report a simple, handy and affordable optical approach for precise number-of-layers determination of graphene on SiC based on monitoring the power of the laser beam reflected from the sample (reflectance mapping) in a slightly modified micro-Raman setup. Reflectance mapping is compatible with simultaneous Raman mapping. We find experimentally that the reflectance of graphene on SiC normalized to the reflectivity of bare substrate (the contrast) increases linearly with similar to 1.7% per layer for up to 12 layers, in agreement with theory The wavelength dependence of the contrast in the visible is investigated using the concept of ideal fermions and compared with existing experimental data for the optical constants of graphene. We argue also that the observed contrast is insensitive to the doping condition of the sample, as well as to the type of sample (graphene on C- or Si-face of 4H or 6H SiC, hydrogen-intercalated graphene). The possibility to extend the precise layer counting to similar to 50 layers makes reflectivity mapping superior to low-energy electron microscopy (limited to similar to 10 layers) in quantitative evaluation of graphene on the C-face of SiC. The method is applicable for graphene on other insulating or semiconducting substrates. (C) 2014 Elsevier Ltd. All rights reserved.
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| 8. |
- Johansson, Leif, et al.
(författare)
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Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC
- 2013
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Ingår i: Crystals. - : MDPI AG. - 2073-4352. ; 3:1, s. 1-13
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Tidskriftsartikel (refereegranskat)abstract
- Graphene grown on C-face SiC substrates using two procedures, high and low growth temperature and different ambients, was investigated using Low Energy Electron Microscopy (LEEM), X-ray Photo Electron Electron Microscopy (XPEEM), selected area Low Energy Electron Diffraction (μ-LEED) and selected area Photo Electron Spectroscopy (μ-PES). Both types of samples showed formation of μm-sized grains of graphene. The sharp (1 × 1) μ-LEED pattern and six Dirac cones observed in constant energy photoelectron angular distribution patterns from a grain showed that adjacent layers are not rotated relative to each other, but that adjacent grains in general have different azimuthal orientations. Diffraction spots from the SiC substrate appeared in μ-LEED patterns collected at higher energies, showing that the rotation angle between graphene and SiC varied. C 1s spectra collected did not show any hint of a carbon interface layer. A hydrogen treatment applied was found to have a detrimental effect on the graphene quality for both types of samples, since the graphene domain/grain size was drastically reduced. From hydrogen treated samples, μ-LEED showed at first a clear (1 × 1) pattern, but within minutes, a pattern containing strong superstructure spots, indicating the presence of twisted graphene layers. The LEED electron beam was found to induce local desorption of hydrogen. Heating a hydrogenated C-face graphene sample did not restore the quality of the original as-grown sample.
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| 9. |
- Kallinger, B., et al.
(författare)
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Comparison of carrier lifetime measurements and mapping in 4H SIC using time resolved photoluminescence and μ-PCD
- 2014
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - Stafa-Zurich, Switzerland : Trans Tech Publications. - 9783038350101 ; , s. 301-304
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Konferensbidrag (refereegranskat)abstract
- Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC epiwafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ by a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive to substrate quality and distribution of extended defects.
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| 10. |
- Li, Xun, et al.
(författare)
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Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
- 2013
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Ingår i: Materials Science Forum (Volumes 740 - 742). - : Trans Tech Publications Inc.. ; , s. 225-228
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Konferensbidrag (refereegranskat)abstract
- Results of surface preparation on Si-face 4° off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 °C, 1600 °C, 1620 °C and 1640 °C, were studied. In-situ etching with only H2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 °C could degrade the substrates surface quality.
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