| 1. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
- 2004
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
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Tidskriftsartikel (refereegranskat)abstract
- Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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| 2. |
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| 3. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Hydrogen-induced improvements in optical quality of GaNAs alloys
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:21, s. 3662-3665
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Tidskriftsartikel (refereegranskat)abstract
- Strong suppression of potential fluctuations in the band edges of GaNAs alloys due to postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band gap, is revealed from temperature-dependent photoluminescence (PL) and PL excitation measurements. The effect likely indicates preferential trapping of hydrogen near the lattice sites with the highest nitrogen content. A remarkable improvement in the radiative efficiency of the alloys at room temperature is also demonstrated and is ascribed to efficient hydrogen passivation of competing nonradiative centers.
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| 4. |
- Buyanova, Irina, 1960-, et al.
(författare)
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On spin injection in GaMnN/InGaN Light-Emitting Diodes
- 2004
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Ingår i: 3rd International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors PASPS III,2004.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 5. |
- Buyanova, Irina, 1960-, et al.
(författare)
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On the origin of spin loss in GaMnN/InGaN Light-Emitting Diodes
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84, s. 2599-
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Tidskriftsartikel (refereegranskat)abstract
- Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.
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| 6. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
- 2004
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 33:5, s. 467-471
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Tidskriftsartikel (refereegranskat)abstract
- (Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.
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| 7. |
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| 8. |
- Izadifard, Morteza, 1965-, et al.
(författare)
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Role of hydrogen in improving optical quality of GaNAs alloys
- 2003
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Ingår i: 11th Int. Conf. on Narrow Bandgap Semiconductors,2003. - Physica E, Vol 20 : Elsevier. ; , s. 313-316
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Konferensbidrag (refereegranskat)abstract
- Effects of hydrogen irradiation on optical quality of GaNxAs1−x alloys grown by gas source molecular beam epitaxy are studied by photoluminescence (PL) and PL excitation spectroscopies. A strong blue shift of the alloy band gap towards the value of a reference N-free GaAs samples is revealed. Substantial improvements in the optical quality of the structures induced by hydrogen, due to a reduction of band edge potential fluctuations, is also demonstrated. The effect is tentatively attributed to the preferential trapping of hydrogen atoms at the lattice sites with the highest N compositions, which leads to the neutralization of electronic states contributing to the band tail states as well as to the improvement in strain uniformity.
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