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| 2. |
- Thinh, N.Q., et al.
(författare)
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Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
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Tidskriftsartikel (refereegranskat)abstract
- A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.
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| 3. |
- Buyanova, Irina A., et al.
(författare)
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Effect of momentum relaxation on exciton spin dynamics in diluted magnetic semiconductor ZnMnSe CdSe superlattices
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:16
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Tidskriftsartikel (refereegranskat)abstract
- cw hot photoluminescence (PL) complemented by transient PL measurements is employed to evaluate momentum and spin relaxation of heavy hole (HH) excitons in ZnMnSe CdSe superlattices. The rate of acoustic-phonon assisted momentum relaxation is concluded to be comparable to the total rate of exciton decay processes, about (2-3) × 1010 s-1, independent of applied magnetic fields. In magnetic fields when the Zeeman splitting ? of the exciton states is below the energy of the longitudinal optical (LO) phonon (?LO), a surprisingly strong suppression of spin relaxation rate from the bottom of the upper spin band is observed, which becomes comparable to that of momentum scattering via acoustic phonons. On the other hand, dramatic acceleration of the spin relaxation process by more than one order of magnitude is found for the excitons with a high momentum K. The findings are interpreted as being due to electron and hole spin flip processes via exchange interaction with isolated Mn2+ ions. Experimental evidence for the efficient interaction between the hot excitons and Mn impurities is also provided by the observation of spin flip transitions within Mn2+ - Mn2+ pairs that accompany the momentum relaxation of the hot HH excitons. In higher magnetic fields ?= ?LO, abrupt shortening of the spin flip time is observed. It indicates involvement of a new and more efficient spin relaxation process and is attributed to direct LO-assisted exciton spin relaxation with a subpicosecond spin relaxation time. © 2005 The American Physical Society.
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| 4. |
- Buyanova, Irina A., et al.
(författare)
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Magneto-optical spectroscopy of spin injection and spin relaxation in ZnMnSe/ZnCdSe and GaMnN/InGaN spin light-emitting structures
- 2007
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Ingår i: 2006 E-MRS Fall Meeting. - : Wiley. ; , s. 159-173
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Konferensbidrag (refereegranskat)abstract
- In this paper we review our recent results from in-depth investigations of physical mechanisms which govern efficiency of several processes important for future spintronic devises, such as spin alignment within diluted magnetic semiconductors (DMS), spin injection from DMS to non-magnetic spin detectors (SDs) and also spin depolarization within SD. Spin-injection structures based on II-VIs (e.g. ZnMnSe/Zn(Cd)Se) and III-Vs (e.g. GaMnN/Ga(In)N) were studied as model cases. Exciton spin relaxation within ZnMnSe DMS, important for spin alignment, was found to critically depend on Zeeman splitting of the exciton states and is largely facilitated by involvement of longitudinal optical (LO) phonons. Optical spin injection in ZnMnSe/Zn(Cd)Se was shown to be governed by (i) commonly believed tunneling of individual carriers or excitons and (ii) energy transfer via localized excitons and spatially separated localized electron-hole pairs (LEHP) located within DMS. Unexpectedly, the latter mechanism is in fact found to dominate spin injections. We shall also show that spin depolarization in the studied structures is essentially determined by efficient spin relaxation within non-magnetic spin detectors, which is an important factor limiting efficiency of spin detection. Detailed physical mechanisms leading to efficient spin depolarization will be discussed.
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| 5. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Band alignment in novel GaInNP/GaAs heterostructures.
- 2007
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Ingår i: 31th Workshop on Compound Semiconductor Devices and Integrated Circuits WOCSDICE 2007,2007. ; , s. 183-186
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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| 7. |
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| 8. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Hydrogen passivation of nitrogen in GaNAs and GaNP alloys : How many H atoms are required for each N atom?
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:2, s. 021920-
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Tidskriftsartikel (refereegranskat)abstract
- Secondary ion mass spectrometry and photoluminescence are employed to evaluate the origin and efficiency of hydrogen passivation of nitrogen in GaNAs and GaNP. The hydrogen profiles are found to closely follow the N distributions, providing unambiguous evidence for their preferential binding as the dominant mechanism for neutralization of N-induced modifications in the electronic structure of the materials. Though the exact number of H atoms involved in passivation may depend on the conditions of the H treatment and the host matrixes, it is generally found that more than three H atoms are required to bind to a N atom to achieve full passivation for both alloys. © 2007 American Institute of Physics.
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| 9. |
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| 10. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Modeling of band gap properties of GaInNP alloys lattice matched to GaAs
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:3, s. 31907-
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Tidskriftsartikel (refereegranskat)abstract
- Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN =2.1±0.1 eV and CMN =1.7±0.2 eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys. © 2006 American Institute of Physics.
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