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Träfflista för sökning "WFRF:(Isberg P) srt2:(2000-2004)"

Sökning: WFRF:(Isberg P) > (2000-2004)

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  • Legrell, P E, et al. (författare)
  • Validity of identification of gonion and antegonion in frontal cephalograms
  • 2000
  • Ingår i: Angle orthodontist. - 0003-3219 .- 1945-7103. ; 70:2, s. 157-64
  • Tidskriftsartikel (refereegranskat)abstract
    • This study was designed to develop a method of transferring gonion from lateral to frontal cephalograms, and to use this method as gold standard when evaluating observer performance in identifying gonion in frontal cephalograms. Observer ability to identify antegonion was also evaluated. There was a range of 28 mm in the observers' identification of gonion and a statistically significant deviation from gold standard. The factors "observer" and "cephalogram," regarded as random effects in an ANOVA analysis, and their interaction, each influenced the result, P < .001. The deviation from the mean of all observations for antegonion ranged 8 mm with "cephalogram" having a statistically significant influence. The results suggest that neither gonion nor antegonion can be routinely used as valid landmarks in frontal cephalograms. Gonion can, however, be used if first identified in a lateral cephalogram and transferred to a paired frontal cephalogram aided by radiographic indicators combined with a bilateral scrutiny of projection geometry in different planes through gonion and indicator.
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  • Palmquist, Jens-Petter, et al. (författare)
  • Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
  • 2002
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:5, s. 835-837
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the synthesis and characterization of epitaxial single-crystalline Ti3SiC2 films (Mn + 1AXn-phase). Two original deposition techniques are described, (i) magnetron sputtering from Ti3SiC2 compound target and (ii) sputtering from individual titanium and silicon targets with co-evaporated C60 as carbon source. Epitaxial Ti3SiC2 films of single-crystal quality were grown at 900 °C with both techniques. Epitaxial TiC(111) deposited in situ on MgO(111) by Ti sputtering using C60 as carbon source was used to nucleate the Ti3SiC2 films. The epitaxial relationship was found to be Ti3SiC2(0001)//TiC(111)//MgO(111) with the in-plane orientation Ti3SiC2[100]//TiC[101]//MgO[101].
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