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- Driussi, F., et al.
(författare)
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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
- 2007
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Ingår i: ESSDERC 2007. - 9781424411238 ; , s. 315-318
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Konferensbidrag (refereegranskat)abstract
- Strained Silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 +/- 0.03% in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm(2)/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
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| 3. |
- Schmidt, M., et al.
(författare)
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Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
- 2009
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 53:12, s. 1246-1251
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Tidskriftsartikel (refereegranskat)abstract
- In this work we discuss limitations of the split-CV method when it is used for extracting carrier mobilities in devices with thin silicon channels like FinFETs, ultra thin body silicon-on-insulator (UTB-SOI) transistors and nanowire MOSFETs. We show that the high series resistance may cause frequency dispersion during the split-CV measurements, which leads to underestimating the inversion charge density and hence overestimating mobility. We demonstrate this effect by comparing UTB-SOI transistors with both recessed-gate UTB-SOI devices and thicker conventional SOI MOSFETs. In addition, the intrinsic high series access resistance in UTB-SOI MOSFETs can potentially lead to an overestimation of the effective internal source/drain voltage, which in turn results in a severe underestimation of the carrier mobility. A specific MOSFET test structure that includes additional 4-point probe channel contacts is demonstrated to circumvent this problem, Finally, we accurately extract mobility in UTB-SOI transistors down to 0.9 nm silicon film thickness (four atomic layers) by utilizing the 4-point probe method and carefully choosing adequate frequencies for the split-CV measurements. It is found that in Such thin silicon film thicknesses quantum mechanical effects shift the threshold voltage and degrade mobility.
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| 4. |
- Schmidt, M., et al.
(författare)
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Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
- 2009
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Ingår i: ULIS 2009. - NEW YORK : IEEE. ; , s. 27-30
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Konferensbidrag (refereegranskat)abstract
- In this abstract, the impact of series resistance on mobility extraction in conventional and recessed-gate ultra thin body (UTB) n-MOSFETs is investigated. High series resistance leads to an overestimation of the internal source / drain voltage and influences the measurement of the gate to channel capacitance. A specific MOSFET design that includes additional channel contacts and recessed gate technology are used to successfully extract mobility down to 0.9 nm silicon film thickness (4 atomic layers). Quantum mechanical effects are found to shift the threshold voltage and degrade mobility at these extreme scaling limits.
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