| 1. |
- Haglund, Åsa, 1976, et al.
(author)
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The quest for ultraviolet vertical-cavity surface-emitting lasers
- 2023
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In: 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023.
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Conference paper (peer-reviewed)abstract
- We daily rely upon vertical-cavity surface-emitting lasers (VCSELs) for facial recognition and data communication. These lasers are now experiencing exponential growth and serves in other applications as well such as oxygen monitoring in combustion processes and in anesthetized patients in hospitals and as a source of heating in industry in the form of a large-sized array. The large interest for this laser class is linked to its beneficial qualities such as low threshold current, circular-symmetric low-divergent output beam, high efficiency, compactness, and low fabrication cost due to on-wafer testing. Due to these advantages, there is a strong push to realize VCSELs in other wavelength regimes, beyond the commercially available infrared and red. This would open completely new markets such as flood lights, projectors, sterilization, and medical diagnosis and treatment.
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| 2. |
- Persson, Lars, 1996, et al.
(author)
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Athermalization of the Lasing Wavelength in Vertical-Cavity Surface-Emitting Lasers
- 2023
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In: Laser and Photonics Reviews. - 1863-8899 .- 1863-8880. ; 17:8
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Journal article (peer-reviewed)abstract
- A concept for vertical-cavity surface-emitting lasers (VCSELs) is proposed and demonstrated to obtain a lasing wavelength with unprecedented temperature stability. The concept is based on incorporating a dielectric material with a negative thermo-optic coefficient, dn/dT, in the distributed Bragg reflectors (DBRs) to compensate the positive dn/dT of the semiconductor cavity. In a short cavity, the optical field has a significant overlap with the DBRs, and the redshift of the lasing wavelength caused by the semiconductor cavity can be compensated by the negative dn/dT of the DBRs. Here, proof of this concept is presented for optically-pumped VCSELs emitting at 310 nm, demonstrating a lasing wavelength that even blueshifts by less than 0.1 nm over an 80 °C range with a maximum slope of –3.4 pm K−1. This is to be compared with a redshift of 1–1.5 nm over the same temperature range reported for III-nitride blue-emitting VCSELs. Furthermore, this method can also be implemented in VCSELs with longer cavity lengths by including a dielectric layer between the semiconductor and the DBR. The approach used here to obtain a temperature-stable lasing wavelength is generic and can therefore be applied to VCSELs in all material systems and lasing wavelengths.
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