| 1. |
- Desplanque, L., et al.
(author)
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AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
- 2012
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:26
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Journal article (peer-reviewed)abstract
- The influence of the growth conditions at the AlSb/GaAs interface on the electron mobility in AlSb/InAs heterostructures is investigated. We show that an excessive antimony flux during the initial stage of the AlSb buffer growth leads to a strong anisotropy of electron mobility in InAs between [110] and [1-10] crystallographic orientations. This anisotropy is attributed to the formation of trenches oriented along the [1-10] direction in the InAs channel. Transmission electron microscopy reveals that these trenches are directly related to twinning defects originating from the AlSb/GaAs interface.
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| 2. |
- Moschetti, Giuseppe, 1982, et al.
(author)
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Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
- 2012
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In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 22:3, s. 144-146
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Journal article (peer-reviewed)abstract
- A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
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| 3. |
- Moschetti, Giuseppe, 1982, et al.
(author)
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Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
- 2012
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In: 15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012. - 9782874870286 ; , s. 373-376
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Conference paper (peer-reviewed)abstract
- The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
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| 4. |
- Moschetti, Giuseppe, 1982, et al.
(author)
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Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
- 2012
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In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 33:4, s. 510-512
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Journal article (peer-reviewed)abstract
- The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 x 10(15) cm(-2) in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an f(T)/f(max) ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.
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| 5. |
- Moschetti, Giuseppe, 1982, et al.
(author)
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Source-drain scaling of ion-implanted InAs/AlSb HEMTs
- 2012
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In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. - : IEEE. - 1092-8669. - 9781467317252 ; , s. 57-60
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Conference paper (peer-reviewed)abstract
- We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and T of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.
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