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- Bengtsson, Stefan, 1961, et al.
(författare)
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Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
- 1990
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Ingår i: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1-
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Konferensbidrag (refereegranskat)abstract
- Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
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- Bengtsson, Stefan, 1961
(författare)
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Characterization of thin SOI layers
- 1995
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Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 221-
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Konferensbidrag (refereegranskat)abstract
- Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding
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