Electrical transport properties of InAs nanowires synthesized by a solvothermal method

Devi, ChandniDepartment of Physics, Central University of Rajasthan, Ajmer, India (författare)

Funding Agency:Ministry of Electronics and Information Technology, Govt. of India at the Indian Institute of Science, Bengaluru Department of Science & Technology (India) Grant Number: YSS/2015/001403University Grants Commission, India Grant Number: F4-5(112-FRP)/2014(BSR)Inter-University Accelerator CentreGrant Number: IUAC/XIII.7/UFR-58322National Council for Scientific and Technological Development (CNPq) CAPES Ciencia Tecnologia e Inovacao (FINEP)
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.

Singhal, RahulDepartment of Physics, Malaviya National Institute of Technology, Jaipur, India (författare)
Silva, Kleber DaCentro de Ciências Naturais e Tecnologia;, Universidade Do Estado Do Pará, Belém, PA, Brazil,Pará State University (UEPA) (författare)
Paschoal, WaldomiroPrograma de Pós-Graduação em Física, Universidade Federal Do Pará, Belém, PA, Brazil,Federal University of Pará(Swepub:lu)ftf-wdp (författare)
Pettersson, Håkan,1962-Halmstad University,Lund University,Lunds universitet,Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS),Solid State Physics and NanoLund, Lund University, Lund, Sweden,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-hap (författare)
Kumar, SandeepLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Department of Physics, Central University of Rajasthan, Ajmer, India(Swepub:lu)nucl-ska (författare)
Department of Physics, Central University of Rajasthan, Ajmer, IndiaDepartment of Physics, Malaviya National Institute of Technology, Jaipur, India (creator_code:org_t)

Ingår i:NanotechnologyBristol : Institute of Physics Publishing (IOPP)31:230957-44841361-6528

Av författaren/redakt...: Devi, Chandni; Singhal, Rahul; Silva, Kleber Da; Paschoal, Waldom ...; Pettersson, Håka ...; Kumar, Sandeep

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