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Band gap engineerin...
Band gap engineering in BiNbO4 for visible-light photocatalysis
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- Wang, Baochang (author)
- KTH,Tillämpad materialfysik
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- Nisar, Jawad (author)
- Uppsala universitet,Materialteori
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- Pathak, Biswarup (author)
- Uppsala universitet,Materialteori
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Kang, T. W. (author)
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- Ahuja, Rajeev (author)
- Uppsala universitet,KTH,Tillämpad materialfysik,Materialteori
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(creator_code:org_t)
- AIP Publishing, 2012
- 2012
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:18, s. 182102-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Subject headings
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- We have investigated the electronic structure of anionic mono- (S, N, and C) and co-doping (N-N, C-N, S-C, and S-N) on BiNbO4 for the visible-light photocatalysis. The maximum band gap reduction of pure BiNbO4 is possible with the (C-S) co-doping and minimum with N mono-doping. The calculated binding energies show that the co-doped systems are more stable than their mono-doped counterparts. Our optical absorption curves indicate that the mono- (C) and co-anionic doped (N-N and C-S) BiNbO4 systems are promising materials for visible light photocatalysis.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Band gap engineering
- Band gap reduction
- Co-doped
- Co-doping
- Visible-light photocatalysis
Publication and Content Type
- ref (subject category)
- art (subject category)
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