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A new physics-based...
A new physics-based circuit model for 4H-SiC power diodes implemented in SABER
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- Kolessar, Remy (författare)
- KTH,Elektrisk energiomvandling
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- Nee, Hans-Peter, 1963- (författare)
- KTH,Elektrisk energiomvandling
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Proc. of the Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2001, APEC 2001, vol. 2, 4-8 March 2001.. ; , s. 989-994
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- 2.5 kV
- 400 A
- 4H-SiC power diodes
- MAST modeling language
- SABER
- SiC
- approximations
- computer simulation
- physics-based circuit model
- turn-off transients
- turn-on transients
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)