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Temperature stable Pd ohmic contacts to p-type 4H-SiC formed at low temperatures

Kassamakova, L (author)
Kakanakov, R D (author)
Kassamakov, I V (author)
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Nordell, N (author)
Savage, S (author)
Hjorvarsson, B (author)
Svedberg, E B (author)
Abom, L (author)
Madsen, L D (author)
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Institute of Electrical and Electronics Engineers (IEEE), 1999
1999
English.
In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; 46:3, s. 605-611
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