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Memory Effect of Me...
Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric
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Huang, Yue (författare)
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Gou, Hong-Yan (författare)
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Sun, Qing-Qing (författare)
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Ding, Shi-Jin (författare)
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Zhang, Wei (författare)
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- Zhang, Shi-Li (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 2009
- 2009
- Engelska.
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Ingår i: Chinese Physics Letters. - 0256-307X .- 1741-3540. ; 26:10
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 x 10(11) cm(-2) and a diameter range of 5-8 nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for +/- 11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 x 10(-8) A/cm(-2) at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.
Nyckelord
- semiconductor structure
- fabrication
- retention
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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