Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle

QC 20161213
The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a number of reasons, e.g. faulty semiconductor modules, faulty gate drivers (GDs), or electro-magnetic interference (EMI). Termination of such SCs is important in order to protect components and reduce the damage in the converter box. This paper presents a new short circuit protection scheme based on a universal current-source GD principle without dedicated hardware components. The performance of the design is evaluated for SC in the dc-link loop under load conditions, called type II and type III. Moreover, measurement results are presented using the proposed GD connected to a 1700 V 300 A SiC MOSFET tested during SC type II and III at two different dc-link stray inductances, 30 nH and 100 nH, and at two different temperatures, 25 °C and 125 °C. The conclusions are that the proposed scheme is able to terminate both SC type II and III with fast reaction time, with low energy dissipation, with a margin of about 15 times below the destructive level for dc-link voltages and load currents up to 1050 V and 300 A respectively.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
FPGA
Gate Drive
Short Circuit
SiC MOSFET
Energy dissipation
Field programmable gate arrays (FPGA)
HVDC power transmission
Motion control
Power control
Power converters
Power electronics
Reconfigurable hardware
Short circuit currents
Silicon carbide
Wide band gap semiconductors
Gate drives
Low energy dissipations
Magnetic interference
Semiconductor modules
Short-circuit protection
Silicon carbide MOSFETs
Voltage source converters
MOSFET devices

In:2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016: Institute of Electrical and Electronics Engineers (IEEE), s. 3392-33979781509012107

By the author/editor: Velander, E.; Kruse, L.; Meier, S.; Lofgren, A.; Wiik, T.; Nee, Hans-Peter; show more...; Sadik, Diane-Per ...; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.