Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

• Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si-28 ions to a dose of 2 x 10(8) cm(-2) and then annealed at temperatures from 100 to 380 degreesC. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V-2) and vacancy-oxygen (VO) centers were studied in detail using deep-level transient spectroscopy. The decrease Of V2 centers exhibits first-order kinetics in both Czochralski-grown (CZ) and float-zone (FZ) samples, and the data provide strong evidence for a process involving migration of V-2 and subsequent annihilation at trapping centers. The migration energy extracted for V-2 is similar to1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length less than or equal to0.1 mum is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen (H) plays a key role through the formation of VOH and VOH2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of similar to 1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

Keyword

electron-irradiated silicon

level transient spectroscopy

hydrogen-oxygen interaction

boron-doped silicon

p-type silicon

point-defects

crystalline silicon

charge state

deep levels

dependence

Publication and Content Type

ref (subject category)

art (subject category)