Sökning: onr:"swepub:oai:DiVA.org:kth-22141" > Effects of proton i...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 02564naa a2200517 4500 | |
001 | oai:DiVA.org:kth-22141 | |
003 | SwePub | |
008 | 100810s2002 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-221412 URI |
024 | 7 | a https://doi.org/10.1109/TNS.2002.8060182 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Leon, R.4 aut |
245 | 1 0 | a Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots |
264 | 1 | c 2002 |
338 | a print2 rdacarrier | |
500 | a QC 20100525 | |
520 | a The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects. | |
653 | a carrier dynamics | |
653 | a compound semiconductors | |
653 | a displacement damage | |
653 | a photoluminescence | |
653 | a Stranski-Krastanow quantum dots | |
653 | a enhanced radiation hardness | |
653 | a light-emitting-diodes | |
653 | a deep levels | |
653 | a gaas | |
653 | a damage | |
653 | a lasers | |
653 | a transformation | |
653 | a dependence | |
653 | a wells | |
653 | a degradation | |
700 | 1 | a Marcinkevicius, Sauliusu KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u16tz6ld |
700 | 1 | a Siegert, J.4 aut |
700 | 1 | a Cechavicius, B.4 aut |
700 | 1 | a Magness, B.4 aut |
700 | 1 | a Taylor, W.4 aut |
700 | 1 | a Lobo, C.4 aut |
710 | 2 | a KTHb Mikroelektronik och informationsteknik, IMIT4 org |
773 | 0 | t IEEE Transactions on Nuclear Scienceg 49:6, s. 2844-2851q 49:6<2844-2851x 0018-9499x 1558-1578 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22141 |
856 | 4 8 | u https://doi.org/10.1109/TNS.2002.806018 |
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.