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A wide-range operat...
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Tu, LiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption
- Article/chapterEnglish2018
Publisher, publication year, extent ...
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2018
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Royal Society of Chemistry,2018
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-236031
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-236031URI
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https://doi.org/10.1039/c8ra04403aDOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20181012
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In thiswork, a wide-range operating synaptic device based on organic ferroelectricity has been demonstrated. The device possesses a simple two-terminal structure by using a ferroelectric phase-separated polymer blend as the active layer and gold/indium tin oxide (ITO) as the top/bottom electrodes, and exhibits a distinctive history-dependent resistive switching behavior at room temperature. And the device with low energy consumption (similar to 50 fJ mu m(-2) per synaptic event) can provide a reliable synaptic function of potentiation, depression and the complex memory behavior simulation of differential responses to diverse stimulations. In addition, using simulations, the accuracy of 32 x 32 pixel image recognition is improved from 76.21% to 85.06% in the classical model Cifar-10 with 1024 levels of the device, which is an important step towards the higher performance goal in image recognition based on memristive neuromorphic networks.
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Yuan, SijianFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Xu, JiaweiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Yang, KunlongKTH,Skolan för elektroteknik och datavetenskap (EECS),Royal Inst Technol, Sch Technol & Hlth, SE-10044 Stockholm, Sweden.(Swepub:kth)u1mv2maf
(author)
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Wang, PengfeiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Cui, XiaoleiFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Zhang, XinNanjing Tech Univ, Key Lab Flexible Elect, Nanjing 211800, Jiangsu, Peoples R China.;Nanjing Tech Univ, Inst Adv Mat, Nanjing 211800, Jiangsu, Peoples R China.
(author)
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Wang, JiaoFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Zhan, Yi-QiangFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Zheng, Li-RongFudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
(author)
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Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.Skolan för elektroteknik och datavetenskap (EECS)
(creator_code:org_t)
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In:RSC Advances: Royal Society of Chemistry8:47, s. 26549-265532046-2069
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Tu, Li
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Yuan, Sijian
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Xu, Jiawei
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Yang, Kunlong
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Wang, Pengfei
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Cui, Xiaolei
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Zhang, Xin
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Wang, Jiao
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Zhan, Yi-Qiang
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Zheng, Li-Rong
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