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The effect of barri...
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Akram, NadeemKTH,Mikroelektronik och Informationsteknik, IMIT
(författare)
The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures
- Artikel/kapitelEngelska2006
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LIBRIS-ID:oai:DiVA.org:kth-24236
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-24236URI
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https://doi.org/10.1109/JQE.2006.876710DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
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QC 20100827
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In this paper, the effect of barrier bandgap and composition on the optical performance of 1.55-mu m InGaAsP/In-GaAsP and InGaAsP/InGaAlAs multiple quantum-well structures and Fabry-Perot lasers is evaluated experimentally. Direct vertical carrier transport measurements were performed through strain-compensated multiple quantum-well (MQW) test structures using femto-second laser pulse excitation and time-resolved photoluminescence up-conversion method. MQW test structures were grown with different barrier composition (InGaAsP and InGaAlAs) and barrier bandgap (varied from lambda(g) = 1440 to 1260 nm) having different conduction band Delta E-c and valence band discontinuity Delta E-v, while keeping the same InGaAsP well composition for all the structures. The ambipolar carrier transport was found to be faster in the structures with lower valence band discontinuity Delta E-v. Regrown semi-insulating buried heterostructure Fabry-Perot (SIBH-FP) lasers were fabricated from similar QWs and their static light-current-voltage characteristics (including optical gain and chirp spectra below threshold) and thermal characteristics were measured. Lasers with InGaAlAs barrier showed improved high-temperature operation, higher optical gain, higher differential gain, and lower chirp, making them suitable candidates for high-bandwidth directly modulated uncooled laser applications.
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Lourdudoss, SebastianKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u16044fg
(författare)
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KTHMikroelektronik och Informationsteknik, IMIT
(creator_code:org_t)
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Ingår i:IEEE Journal of Quantum Electronics42:7, s. 713-7140018-91971558-1713
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