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< 50-mu m thin crystalline silicon heterojunction solar cells with dopant-free carrier-selective contacts
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- Dai, Hao (author)
- Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China.
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- Yang, Liu (author)
- Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China.;Zhejiang Univ, Ningbo Res Inst, Ningbo 315100, Zhejiang, Peoples R China.
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- He, Sailing (author)
- KTH,Zhejiang-KTH Joint Research Center of Photonics, JORCEP,Skolan för elektroteknik och datavetenskap (EECS),Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China.;Zhejiang Univ, Ningbo Res Inst, Ningbo 315100, Zhejiang, Peoples R China.
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Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China Zhejiang Univ, Natl Engn Res Ctr Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310058, Zhejiang, Peoples R China.;Zhejiang Univ, Ningbo Res Inst, Ningbo 315100, Zhejiang, Peoples R China. (creator_code:org_t)
- ELSEVIER, 2019
- 2019
- English.
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In: Nano Energy. - : ELSEVIER. - 2211-2855 .- 2211-3282. ; 64
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Dopant-free carrier-selective contacts are emerging in the field of crystalline silicon (c-Si) photovoltaic solar cells, which are potential to further improve the power conversion efficiency (PCE) and lower the cost of c-Si solar cells. Here, we demonstrate tens of microns thin c-Si heterojunction solar cells with substochiometric MoOx and LiFx as dopant-free hole- and electron-selective contacts, respectively. Chemical thinning of 200-mu m thick c-Si wafers enables the production of proof of concept devices with good flexibility and strong performance. When the wafer thickness is reduced to 49.4 mu m (24.7% of the initial thickness), the power conversion efficiency (PCE) of the solar cell still maintains 88.2% of the initial value for the 200-mu m thick cell. When the wafer thickness becomes less than 10% (or even 3.4%) of the initial value, 61.2% and 39.2% of the initial PCEs are still achieved for the 14.8- and 6.8-mu m thick cells, respectively. Passivating and carrier-selective effects of the MoOx and LiFx films allow for the maintenance of performance. An oxide interlayer at the MoOx/c-Si interface passivates the dangling bonds of the c-Si surface and improves the minority carrier lifetime. Field-effect passivation and carrier-selective effects induced by the band bending near the MoOx/c-Si interface and the Al/LiFx/c-Si interface play an important role in maintaining high open-circuit voltage and high fill factor. To the best of our knowledge, this is the first time that <100-mu m thin c-Si heterojunction solar cells are reported with undoped contacts. Our solar cells have been fabricated on thin c-Si wafers with low-temperature processes and without additional doping, and thus our work provides a promising cost-effective means in the field of thin and flexible c-Si solar cells.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Crystalline silicon heterojunction solar cell
- Dopant-free carrier-selective contacts
- Thin wafer
- Passivation
- Band bending
- Material and Nano Physics
- Material- och nanofysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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