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Dopant incorporatio...
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Azarov, AlexanderKTH,Mikroelektronik och tillämpad fysik, MAP
(author)
Dopant incorporation in thin strained Si layers implanted with Sb
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Publisher, publication year, extent ...
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Elsevier BV,2010
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-29929
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-29929URI
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https://doi.org/10.1016/j.tsf.2009.09.160DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20110117 Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 2009
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The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.
Subject headings and genre
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Strained Si
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Ion implantation
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Sb incorporation
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Zamani, AtiehKTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u18l4nyo
(author)
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Radamson, Henry H.KTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u1g2cqgr
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Vines, L.
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Kuznetsov, A. Yu.
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Hallén, AndersKTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u11ywmz1
(author)
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KTHMikroelektronik och tillämpad fysik, MAP
(creator_code:org_t)
Related titles
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In:Thin Solid Films: Elsevier BV518:9, s. 2474-24770040-60901879-2731
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