Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors

QC 20240221
The modulation transfer function (MTF) in fully delineated 15 μ m pitch type-II superlattice (T2SL) mid-wave infrared (IR) detectors is studied theoretically and experimentally. Theoretically, a 2-D model to simulate the spot scan (SS) profile is presented and used to compute the MTF as a function of the wavelength and the array geometry (pitch size, trench width). The dependence of the detector trench on the MTF is also evaluated experimentally by the edge spread function (ESF) method according to the ISO12233 standard. The experimental results show an excellent agreement with the theoretical model, reporting an MTF of 0.61 and 0.60 at the Nyquist frequency for 1 and 2 μ m trench, respectively. With the simulation model, the effect of the increased optical crosstalk for smaller pixel pitch is discussed as a function of the trench width (0.5, 1, and 2 μ m) and incidence angle up to ± 30 ∘ . Simulation results show MTF values at the Nyquist frequency between 0.61–0.62, 0.58–0.60, and 0.55–0.57 with an average degradation of 1%, 2%, and 7% at an angle of ± 30 ∘ compared to normal incidence for the 10, 7.5, and 5 μ m pitch, respectively.

Delmas, M.IRnova AB, Stockholm, Sweden (author)
Ivanov, R.IRnova AB, Stockholm, Sweden (author)
Žurauskaitė, L.IRnova AB, Stockholm, Sweden (author)
Evans, D.IRnova AB, Stockholm, Sweden (author)
Rihtnesberg, D.IRnova AB, Stockholm, Sweden (author)
Bendrot, L.IRnova AB, Stockholm, Sweden (author)
Smuk, S.IRnova AB, Stockholm, Sweden (author)
Smuk, A.IRnova AB, Stockholm, Sweden (author)
Becanovic, S.IRnova AB, Stockholm, Sweden (author)
Almqvist, S.IRnova AB, Stockholm, Sweden (author)
Tinghag, P.IRnova AB, Stockholm, Sweden (author)
Fattala, S.IRnova AB, Stockholm, Sweden (author)
Costard, E.IRnova AB, Stockholm, Sweden (author)
Höglund, L.IRnova AB, Stockholm, Sweden (author)
Hellström, Per-Erik,1970-KTH,Elektronik och inbyggda system(Swepub:kth)u1wc1lgb (author)
KTHElektronik och inbyggda system (creator_code:org_t)

In:IEEE Transactions on Electron Devices: Institute of Electrical and Electronics Engineers (IEEE)71:4, s. 2459-24640018-93831557-9646

By the author/editor: Ramos Santesmase ...; Delmas, M.; Ivanov, R.; Žurauskaitė, L.; Evans, D.; Rihtnesberg, D.; show more...; Bendrot, L.; Smuk, S.; Smuk, A.; Becanovic, S.; Almqvist, S.; Tinghag, P.; Fattala, S.; Costard, E.; Höglund, L.; Hellström, Per-E ...; show less...

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