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Room temperature fe...
Room temperature ferromagnetism in transition metal (V, Cr, Ti) doped In(2)O(3)
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- Gupta, Amita (författare)
- KTH,Teknisk materialfysik
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Cao, Hongtao (författare)
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Parekh, Kinnari (författare)
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- Rao, K. Venkat (författare)
- KTH,Teknisk materialfysik
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Raju, A. R. (författare)
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Waghmare, Umesh V. (författare)
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(creator_code:org_t)
- AIP Publishing, 2007
- 2007
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:9, s. 09N513-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Indium oxide is chosen as the host material for doping Ti, V, and Cr transition metal ions. Theoretical calculations based on density functional theory within a local spin density approximation show that V-V separation of 5.6 A is more stable with a strong ferromagnetic coupling. Our calculations clearly predict that substitution of vanadium for indium should yield ferromagnetism in In(2)O(3). Experimentally, (In(0.95)TM(0.05))O(3) (TM=Ti,V,Cr) were prepared using sol-gel as well as solid state reaction methods. Superconducting quantum interference device magnetization measurements as a function of field and temperature clearly showed that the V and Cr doped samples are ferromagnetic with Curie temperature well above room temperature. Thin films deposited by pulsed laser ablation using these materials on sapphire substrates exhibit a preferred 222 orientation normal to the plane of the film. The magnetic moment for (In(0.95)V(0.05))O(3) film deposited in 0.1 mbar oxygen pressure was estimated to be 1.7 mu(B)/V and is comparable to the theoretical value of 2 mu(B)/V.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- semiconductors
- bulk
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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