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Study of optical ch...
Study of optical characteristics of damage in oxygen-implanted 6H-SiC
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Wang, L. (author)
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Huang, J. (author)
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Lin, C. (author)
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Zou, S. (author)
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Zheng, Y. (author)
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Wang, X. (author)
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Huang, D. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 1999
- 1999
- English.
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In: Journal of materials science letters. - 0261-8028 .- 1573-4811. ; 18:12, s. 979-982
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http://www.scopus.co...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- Oxygen ions, with an energy of 70 keV, and doses ranging from 5×1013 to 5×1015 cm-2, were implanted into 6H SiC. The damage energies were calculated as 0.93-93 eV/atom with the doses respectively. The dielectric function obtained from spectroscopic ellipsometry were quite sensitive to ion irradiation of the surface, while the first order Raman spectroscopy decreased in intensity with increasing O+ ion dose. The damage behavior characterized by optical measurements was in good agreement with characterization by Rutherford backscattering spectrometry and channeling and atomic force microscopy.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Atomic force microscopy
- Carrier concentration
- Doping (additives)
- Energy gap
- Ion implantation
- Light absorption
- Nanostructured materials
- Oxidation
- Oxygen
- Point defects
- Radiation damage
- Rutherford backscattering spectroscopy
- Elastic damage energy
- Spectroscopic ellipsometry
- Silicon carbide
Publication and Content Type
- ref (subject category)
- art (subject category)
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