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Heteroepitaxy of In...
Heteroepitaxy of InP on Silicon-on-Insulator for Optoelectronic Integration
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- Olsson, Fredrik (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Aubert, Amandine (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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Avella, M. (författare)
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Jiménez, J. (författare)
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Barrios, C. A. (författare)
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- Berggren, Jesper (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Lourdudoss, Sebastian (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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(creator_code:org_t)
- The Electrochemical Society, 2007
- 2007
- Engelska.
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 3:39, s. 23-29
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Epitaxial lateral overgrowth of InP was performed on patterned silicon-on-insulator (SOI) and compared with that on Si substrates in a low pressure hydride vapor phase epitaxy system. The InP was characterized by cathodoluminescence. No red shift of peak wavelength was detected for InP/SOI indicating a negligible thermal strain. Additional low energy peaks were found in some regions with a granular structure on the SOI template. A subsequent growth of an InGaAsP/InP MQW (multi quantum well) structure (λ∼1.5 μm) was grown on the SOI template and on a planar InP reference sample by metal-organic phase epitaxy. The MQW was characterized by room temperature photoluminescence. A red shift of 35 nm with respect to the reference sample was attributed to the selective-area effect causing thicker wells and/or an increased indium content. Although the PL intensity was weaker than that obtained for the reference, the FWHMs were comparable.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- area effect
- Electrochemical Society (ECS)
- Epitaxial lateral overgrowth (ELOG)
- Granular structures
- Hetero-epitaxy
- Hydride vapor-phase epitaxy (HVPE)
- indium content
- InGaAsP/InP
- Low pressure (LP)
- Low-energy peaks
- Metal organic (MO)
- Multi quantum well (MQW)
- on Patterned Silicon (GPS)
- Optoelectronic integrations
- Peak wavelengths
- Photoluminescence (PL) intensity
- red shifting
- Room Temperature Photoluminescence (RT-PL)
- Si(2 1 1) substrates
- Silicon on insulator (SOI)
- Astrophysics
- Blood vessel prostheses
- Computer networks
- Crystal growth
- Doppler effect
- Epitaxial growth
- Light emission
- Luminescence
- Microsensors
- Molecular beam epitaxy
- Nonmetals
- Optical sensors
- Photonics
- Semiconductor quantum wells
- Silicon
- Electrical engineering, electronics and photonics
- Elektroteknik, elektronik och fotonik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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